An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices-Part II
- Author
- WANG, Y1 ; CHEUNG, Kin P2 ; CHOI, R3 ; LEE, B.-H3
[1] Department of Electrical and Computer Engineering, Rutgers University, Camden, NJ 08102-1519, United States
[2] Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, United States
[3] SEMATECH, Austin, TX 78741, United States - Source
I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 9, pp 2437-2442, 6 p ; ref : 9 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- C-V RF capacitor leakage time domain time- domain reflectometry (TDR) ultrathin oxide
- Keyword (fr)
- Calcul erreur Capacité électrique Caractéristique capacité tension Condensateur MOS Couche ultramince Courant fuite Méthode domaine temps Réflectométrie
- Keyword (en)
- Error analysis Capacitance Voltage capacity curve MOS capacitor Ultrathin films Leakage current Time domain method Reflectometry
- Keyword (es)
- Cálculo error Capacitancia Característica capacidad tensión Capacidad MOS Corriente escape Método dominio tiempo Reflectometría
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F09 Dielectric, amorphous and glass solid devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20594238
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2008.927659 
https://dx.doi.org/10.1109/TED.2008.927659
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