Influence of a substrate, structure and annealing procedures on crystalline and optical properties of Si/SiO2 multiple quantum wells
- Author
- MCHEDLIDZE, T1 ; ARGUIROV, T1 2 ; KOUTEVA-ARGUIROVA, S1 ; JIA, G1 ; KITTLER, M1 2 ; RÖLVER, R3 ; BERGHOFF, B3 ; FÖRST, M3 ; BÄTZNER, D. L3 ; SPANGENBERG, B3
[1] IHP/BTU Jointlab, Brandenburg University of Technology, 03046 Cottbus, Germany
[2] IHP, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany
[3] Institute of Semiconductor Electronics, RWTH Aachen University, 52074 Aachen, Germany - Conference title
- Proceedings on Advanced Materials and Concepts for Photovoltaics EMRS 2007 Conference, Strasbourg, France
- Conference name
- Advanced Materials and Concepts for Photovoltaics EMRS 2007 Conference (Strasbourg 2007-06)
- Author (monograph)
- DENNLER, G (Editor)1 ; JAËGER-WALDAU, A (Editor)2 ; KROON, J (Editor)3 ; SLAOUI, A (Editor)4
[1] Konarka Austria GmbH, Austria
[2] JRC-European Commission, Italy
[3] ECN, Netherlands
[4] InESS-CNRS, Strasbourg, France - Source
Thin solid films. 2008, Vol 516, Num 20, pp 6800-6803, 4 p ; ref : 15 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Si thin films Si/SiO2 multiple quantum wells Silicon nanocrystals
- Keyword (fr)
- Couche mince Cristallinité Cristallisation Diffusion Raman Effet contrainte Epaisseur couche Nanocristal Nanomatériau Oxyde de silicium Photoluminescence Propriété optique Puits quantique multiple Quartz Recuit thermique rapide Silicium Spectre Raman 6855J 7855 7866 8107S Si SiO2 SiOx Substrat saphir
- Keyword (en)
- Thin films Crystallinity Crystallization Raman scattering Stress effects Layer thickness Nanocrystal Nanostructured materials Silicon oxides Photoluminescence Optical properties Multiple quantum well Quartz Rapid thermal annealing Silicon Raman spectra
- Keyword (es)
- Cristalinidad Difusión Ramán Espesor capa Nanocristal Pozo cuántico múltiple
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07S Quantum wells
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20594306
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2007.12.083 
https://dx.doi.org/10.1016/j.tsf.2007.12.083
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