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The Meyer-Neldel rule in sol-gel derived polycrystalline ZnO:Al thin films

Author
SAGAR, Parmod1 ; KUMAR, Manoj2 ; MEHRA, R. M3
[1] Department of Physics, Shivaji College, University of Delhi, New Delhi-11007, India
[2] Department of New Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul 120-749, Korea, Republic of
[3] Department of Electronic Science, University of Delhi South Campus, New Delhi-110021, India
Source

Solid state communications. 2008, Vol 147, Num 11-12, pp 465-469, 5 p ; ref : 28 ref

CODEN
SSCOA4
ISSN
0038-1098
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
72.80.Ey;73.50.Bk;73.50.-h;A. ZnO thin film;B.Sol-gel process;D. Electronic transport;D. Al doping
Keyword (fr)
Addition aluminium Concentration impureté Conduction saut Conductivité électrique Couche mince Dopage Energie activation Oxyde de zinc Polycristal Procédé sol gel Saut à distance variable ZnO
Keyword (en)
Aluminium additions Impurity density Hopping conduction Electrical conductivity Thin films Doping Activation energy Zinc oxide Polycrystals Sol-gel process
Keyword (es)
Concentración impureza Doping Zinc óxido
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C50 Electronic transport phenomena in thin films and low-dimensional structures / 001B70C50D Low-field transport and mobility; piezoresistance

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20602404

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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