T-shaped shallow trench isolation with unfilled floating void
- Author
- IRRERA, F1 2 ; PUZZILLI, G1 2 ; RICCI, L1 2 ; RUSSO, F3 ; STIRPE, F2 3
[1] University of Rome La sapienza. Electronics Department, Via Eudossiana 18, 00184 Rome, Italy
[2] IU.NET(Italian University Nano Electronics Team), Italy
[3] Micron Technology Italia, Via Pacinotti 7, 67100 Avezzano, Italy - Source
Solid-state electronics. 2008, Vol 52, Num 8, pp 1188-1192, 5 p ; ref : 14 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- CMOS image sensors Dark current Isolation technology
- Keyword (fr)
- Capteur image CMOS Cavité dans réseau Courant fuite Courant obscurité Détecteur image Evaluation performance Forme en T Optimisation Pixel intelligent Technologie MOS complémentaire Technologie isolation Technologie tranchée
- Keyword (en)
- CMOS image sensors Void Leakage current Dark current Image sensor Performance evaluation T shape Optimization Smart pixels Complementary MOS technology Insulation technology Trench technology
- Keyword (es)
- Cavidad en red Corriente escape Corriente obscuridad Detector imagen Evaluación prestación Forma de una T Optimización Tecnología MOS complementario Tecnología aislamiento Tecnología trinchera
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F16 Imaging devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20605027
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2008.05.002 
https://dx.doi.org/10.1016/j.sse.2008.05.002
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