A simple analytical model for the front and back gate threshold voltages of a fully-depleted asymmetric SOI MOSFET
- Author
- CHUNG HA SUH1
[1] School of Electronic and Electrical Engineering, Hongik University, 72-1 Sangsu-Dong, Mapo-Gu, Seoul 121-791, Korea, Republic of - Source
Solid-state electronics. 2008, Vol 52, Num 8, pp 1249-1255, 7 p ; ref : 25 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- 73.40.Qvs Drain induced threshold voltage roll-off Fully-depleted SOI MOSFET Short channel SOI MOSFET
- Keyword (fr)
- Canal court Couche appauvrissement Couche oxyde Distribution potentiel Modèle 2 dimensions Méthode analytique Potentiel surface Seuil tension Silicium Surface arrière Technologie silicium sur isolant Tension de grille Tension drain Tension polarisation Transistor MOSFET Si
- Keyword (en)
- Short channel Depletion layer Oxide layer Potential distribution Two dimensional model Analytical method Surface potential Voltage threshold Silicon Back surface Silicon on insulator technology Gate voltage Drain voltage Bias voltage MOSFET
- Keyword (es)
- Canal corto Capa empobrecimiento Capa óxido Distribución potencial Modelo 2 dimensiones Método analítico Potencial superficie Umbral tensión Silicio Superficie atrás Tecnología silicio sobre aislante Voltaje de rejilla Tensión dren Voltage polarización
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20605038
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2008.05.014 
https://dx.doi.org/10.1016/j.sse.2008.05.014
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