The Effect of Field Oxide Recess on Cell VTH Distribution of NAND Flash Cell Arrays
- Author
- PARK, Mincheol1 ; LEE, Chang-Sub1 ; HUR, Sung-Hoi1 ; KIM, Keonsoo1 ; LEE, Won-Seong1
[1] Semiconductor R&D Center, Samsung Electronics Company, Ltd, Yongin 449-711, Korea, Republic of - Source
IEEE electron device letters. 2008, Vol 29, Num 9, pp 1050-1052, 3 p ; ref : 11 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Cell VTH distribution NAND flash memory narrow width effect
- Keyword (fr)
- Champ électrique Circuit NON ET Circuit intégré Circuit logique Mémoire flash Optimisation Procédé fabrication Système n niveaux Technologie grille flottante Technologie isolation Technologie tranchée Tension de commande Tension de grille
- Keyword (en)
- Electric field NAND circuit Integrated circuit Logic circuit Flash memory Optimization Manufacturing process Multilevel system Floating gate technology Insulation technology Trench technology Actuation voltage Gate voltage
- Keyword (es)
- Campo eléctrico Circuito NOY Circuito integrado Circuito lógico Memoria flash Optimización Procedimiento fabricación Sistema n niveles Tecnología rejilla flotante Tecnología aislamiento Tecnología trinchera Voltaje de control Voltaje de rejilla
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A6 Digital circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20613222
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2008.2001797 
https://dx.doi.org/10.1109/LED.2008.2001797
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