Stack System of PECVD Amorphous Silicon and PECVD Silicon Oxide for Silicon Solar Cell Rear Side Passivation
- Author
- HOFMANN, M1 ; SCHMIDT, C1 ; KOHN, N1 ; RENTSCH, J1 ; GLUNZ, S. W2 ; PREU, R1
[1] Fraunhofer Institute for Solar Energy Systems, Dept. PTQ, Heidenhofstrasse 2, 79110 Freiburg, Germany
[2] Fraunhofer Institute for Solar Energy Systems, Dept. SEC, Heidenhofstrasse 2, 79110 Freiburg, Germany - Source
Progress in photovoltaics. 2008, Vol 16, Num 6, pp 509-518, 10 p ; ref : 41 ref
- Publisher
- Wiley, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- PERC amorphous silicon high efficiency laser-fired contacts rear surface passivation silicon solar cell
- Keyword (fr)
- Cellule solaire silicium Cellule solaire Conversion énergie Couche superficielle Erreur systématique Facteur réflexion Intensité lumineuse Laser Méthode PECVD Oxyde de silicium Passivation Recombinaison superficielle Rendement élevé Rendement énergétique Simulation
- Keyword (en)
- Silicon solar cells Solar cell Energy conversion Surface layer Bias Reflectance Luminous intensity Laser PECVD Silicon oxides Passivation Surface recombination High efficiency Energetic efficiency Simulation
- Keyword (es)
- Célula solar Conversión energética Capa superficial Error sistemático Coeficiente reflexión Intensidad luminosa Láser Pasivación Recombinación superficial Rendimiento elevado Rendimiento energético Simulación
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Discipline
- Energy
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20618467
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pip.835 
https://dx.doi.org/10.1002/pip.835
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