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Intensity Weighed Focus Drilling Exposure for Maximizing Process Window of Sub-100nm Contact by Simulation

Author
JUNE, Sunwook1 ; YANG, Tien-Chu1 ; YANG, Ta-Hung1 ; CHEN, Kuang-Chao1 ; LU, Chih-Yuan1
[1] Macronix International Co. Ltd, No. 16, Li-Hsin Rd., Science Park, Hsinchu 300, Taiwan, Province of China
Conference title
Optical microlithography XX (27 February-2 March 2007, San Jose, California, USA)
Conference name
Optical microlithography (20 ; San Jose CA 2007)
Author (monograph)
Flagello, Donis G (Editor)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting)
International SEMATECH, United States (Organiser of meeting)
Source

Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 65202C.1-65202C.8 ; ref : 3 ref

CODEN
PSISDG
ISSN
0277-786X
ISBN
978-0-8194-6639-6
Scientific domain
Electronics; Optics; Physics
Publisher
SPIE, Bellingham, Wash
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Eclairement Evaluation performance Fabrication microélectronique Haute fréquence Haute résolution Photolithographie Plan focal Scanneur
Keyword (en)
Illumination Performance evaluation Microelectronic fabrication High frequency High resolution Photolithography Focal plane Scanner
Keyword (es)
Alumbrado Evaluación prestación Fabricación microeléctrica Alta frecuencia Alta resolucion Fotolitografía Plano focal Escáner
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F16 Imaging devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20651329

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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