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Spin states in semiconductor quantum dot with a single magnetic ion

Author
LI, X. J1 ; YANG, W1 ; KAI CHANG1 ; XIA, J. B1
[1] SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
Source

Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 10, pp 3097-3106, 10 p ; ref : 22 ref

ISSN
1386-9477
Scientific domain
Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
61.72.Vv 68.65.Hb 81.40.Rs Magneto-optical property Quantum dot sp-d Exchange interaction
Keyword (fr)
Addition manganèse Anticroisement niveau Décomposition niveau énergie Effet champ magnétique Effet magnétooptique Etat spin Impureté magnétique Interaction courte portée Interaction échange Orientation spin Paire électron trou Point quantique Semiconducteur Tellurure de cadmium CdTe
Keyword (en)
Manganese additions Level anticrossing Energy-level splitting Magnetic field effects Magneto-optical effects Spin state Magnetic impurities Short-range interactions Exchange interactions Spin orientation Electron hole pair Quantum dots Semiconductor materials Cadmium tellurides
Keyword (es)
Anticrecimiento nivel Estado espín Par electrón hueco
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems / 001B70C21L Quantum dots

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20657663

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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