Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography
- Author
- SAEKI, Akinori1 ; KOZAWA, Takahiro1 ; TAGAWA, Seiichi1 ; CAO, Heidi B2 ; HAI DENG2 ; LEESON, Michael J2
[1] The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
[2] Intel Corporation, 5200 N.E. Elam Young Parkway, Hillsboro, OR 97124, United States - Conference title
- Advances in resist materials and processing technology XXV (25-27 February 2008, San Jose, California, USA)
- Conference name
- Advances in resist materials and processing technologies (25 ; San Jose CA 2008)
- Author (monograph)
- Henderson, Clifford L (Editor)
SPIE, United States (Organiser of meeting)
International SEMATECH (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69230S.1-69230S.6 ; ref : 33 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-7108-6
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham, Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Conditions opératoires Fabrication microélectronique Faisceau électronique Haute fréquence Lithographie Méthode Monte Carlo Photolithographie Processus diffusion Rayonnement UV extrême Rugosité Résist amplification chimique Résist positif Simulation numérique
- Keyword (en)
- Process conditions Microelectronic fabrication Electron beam High frequency Lithography Monte Carlo method Photolithography Diffusion process Vacuum ultraviolet radiation Roughness Chemically amplified resist Positive resist Numerical simulation
- Keyword (es)
- Condiciones operatorias Fabricación microeléctrica Haz electrónico Alta frecuencia Litografía Método Monte Carlo Fotolitografía Proceso difusión Radiación ultravioleta extrema Rugosidad Resistencia amplificación química Resistencia positiva Simulación numérica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20674114
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Install on your browser
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:122:\"Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"69230S.1\";s:8:\"\u0000*\u0000epage\";s:8:\"69230S.6\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SAEKI\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Akinori\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:16:\"KOZAWA, Takahiro\";i:1;s:15:\"TAGAWA, Seiichi\";i:2;s:12:\"CAO, Heidi B\";i:3;s:8:\"HAI DENG\";i:4;s:17:\"LEESON, Michael J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-7108-6\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:107:\"Advances in resist materials and processing technology XXV (25-27 February 2008, San Jose, California, USA)\";s:8:\"\u0000*\u0000title\";s:122:\"Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:122:\"Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"69230S.1\";s:8:\"\u0000*\u0000epage\";s:8:\"69230S.6\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SAEKI\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Akinori\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:16:\"KOZAWA, Takahiro\";i:1;s:15:\"TAGAWA, Seiichi\";i:2;s:12:\"CAO, Heidi B\";i:3;s:8:\"HAI DENG\";i:4;s:17:\"LEESON, Michael J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-7108-6\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:107:\"Advances in resist materials and processing technology XXV (25-27 February 2008, San Jose, California, USA)\";s:8:\"\u0000*\u0000title\";s:122:\"Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:122:\"Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"69230S.1\";s:8:\"\u0000*\u0000epage\";s:8:\"69230S.6\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SAEKI\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Akinori\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:16:\"KOZAWA, Takahiro\";i:1;s:15:\"TAGAWA, Seiichi\";i:2;s:12:\"CAO, Heidi B\";i:3;s:8:\"HAI DENG\";i:4;s:17:\"LEESON, Michael J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-7108-6\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:107:\"Advances in resist materials and processing technology XXV (25-27 February 2008, San Jose, California, USA)\";s:8:\"\u0000*\u0000title\";s:122:\"Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:122:\"Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"69230S.1\";s:8:\"\u0000*\u0000epage\";s:8:\"69230S.6\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SAEKI\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Akinori\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:16:\"KOZAWA, Takahiro\";i:1;s:15:\"TAGAWA, Seiichi\";i:2;s:12:\"CAO, Heidi B\";i:3;s:8:\"HAI DENG\";i:4;s:17:\"LEESON, Michael J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-7108-6\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:107:\"Advances in resist materials and processing technology XXV (25-27 February 2008, San Jose, California, USA)\";s:8:\"\u0000*\u0000title\";s:122:\"Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:122:\"Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:8:\"69230S.1\";s:8:\"\u0000*\u0000epage\";s:8:\"69230S.6\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"SAEKI\";s:10:\"\u0000*\u0000aufirst\";s:7:\"Akinori\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:16:\"KOZAWA, Takahiro\";i:1;s:15:\"TAGAWA, Seiichi\";i:2;s:12:\"CAO, Heidi B\";i:3;s:8:\"HAI DENG\";i:4;s:17:\"LEESON, Michael J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-7108-6\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:107:\"Advances in resist materials and processing technology XXV (25-27 February 2008, San Jose, California, USA)\";s:8:\"\u0000*\u0000title\";s:122:\"Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
