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Monte Carlo simulation of electron mobility in strained Si DG-FETs with TB bandstructure calculation

Author
XIMENG GUAN1 ; LIU YANG1 ; ZHIPING YU1
[1] Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Conference title
12th International Workshop on Computational Electronics (IWCE12)
Conference name
International Workshop on Computational Electronics (IWCE12) (IWCE12) (12 ; Amherst, MA 2007-10-08)
Author (monograph)
FISCHETTI, Massimo V (Editor); ANDERSON, Neal G (Editor); POLIZZI, Eric (Editor)
Source

Journal of computational electronics (Print). 2008, Vol 7, Num 3, pp 192-196, 5 p ; ref : 5 ref

ISSN
1569-8025
Scientific domain
Electronics
Publisher
Kluwer Academic Publishers, Boston / Kluwer Academic Publishers, Dordrecht
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Stress, Electron mobility, Ultra-thin-body Tight-binding (TB), Monte Carlo (MC)
Keyword (fr)
Approximation liaison forte Bande conduction Champ transversal Champ électrique Contrainte déformation Contrainte électrique Couche ultramince Cristal lamellaire Effet contrainte Masse effective Mobilité électron Méthode Monte Carlo Orientation cristalline Silicium Simulation numérique Structure bande Système basse dimensionnalité Terbium Transistor MOSFET Transistor effet champ Transistor grille double Si Tb
Keyword (en)
Tight binding approximation Conduction band Transverse field Electric field Stress strain Electric stress Ultrathin films Layered crystals Stress effects Effective mass Electron mobility Monte Carlo method Crystal orientation Silicon Numerical simulation Band structure Low-dimensional system Terbium MOSFET Field effect transistor Dual gate transistor
Keyword (es)
Aproximación ligadura fuerte Banda conducción Campo transversal Campo eléctrico Tensión deformante Tensión eléctrica Masa efectiva Movilidad electrón Método Monte Carlo Orientación cristalina Silicio Simulación numérica Estructura banda Terbio Transistor efecto campo Transistor de compuerta doble
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20739220

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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