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Single and Tandem Axial p-i-n Nanowire Photovoltaic Devices

Author
KEMPA, Thomas J1 ; TIAN, Bozhi1 ; DONG RIP KIM2 ; JINSONG HU1 ; XIAOLIN ZHENG2 ; LIEBER, Charles M1 3
[1] Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States
[2] Department of Mechanical Engineering, Stanford University, Stanford, California 94305, United States
[3] School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138, United States
Source

Nano letters (Print). 2008, Vol 8, Num 10, pp 3456-3460, 5 p ; ref : 23 ref

ISSN
1530-6984
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
American Chemical Society, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Addition phosphore Bande interdite Caractéristique courant tension Cellule solaire Composé organique volatil Conversion énergie Densité courant Diode Dispositif nanofil Dispositif photovoltaïque Dopage Dépendance température Eclairement Facteur qualité Jonction p i n Microscopie électronique balayage Nanofil Nanomatériau Propriété électrique Propriété électronique Silicium 7321 8107B 8460J 8535K Si
Keyword (en)
Phosphorus addition Energy gap Voltage current curve Solar cell Volatile organic compound Energy conversion Current density Diode Nanowire device Photovoltaic cell Doping Temperature dependence Illumination Q factor p i n junctions Scanning electron microscopy Nanowires Nanostructured materials Electrical properties Electronic properties Silicon
Keyword (es)
Adición fósforo Banda prohibida Característica corriente tensión Célula solar Compuesto orgánico volátil Conversión energética Densidad corriente Diodo Dispositivo nanohilo Dispositivo fotovoltaico Doping Alumbrado Factor calidad Microscopía electrónica barrido Propiedad eléctrica Propiedad electrónica Silicio
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells

Discipline
Electronics Energy Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20768275

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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