Influence of crystallographic orientation on local strains in silicon : A combined high-resolution X-ray diffraction and finite element modelling investigation
- Author
- EBERLEIN, M1 2 ; ESCOUBAS, S1 ; GAILHANOU, M1 ; THOMAS, O1 ; ROHR, P2 ; COPPARD, R2
[1] TECSEN-CNRS Université Paul Cézanne (Aix-Marseille III), FST Saint Jérôme, 13397 Marseille, France
[2] ATMEL Rousset, ZI ROUSSET, 13106 Rousset, France - Conference title
- Proceedings of the EMRS 2007 Fall Meeting Symposium H: Current Trends in Optical and X-Ray Metrology of Advanced Materials and Devices II, Warsaw, Poland
- Conference name
- Current Trends in Optical and X-Ray Metrology of Advanced Materials and Devices II. Symposium H (Warsaw 2007-09-17)
- Author (monograph)
- SERVET, Bernard (Editor); TOMOZEIU, Nicolae (Editor)
- Source
Thin solid films. 2008, Vol 516, Num 22, pp 8042-8048, 7 p ; ref : 19 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Shallow trench isolation Silicon Strain Stress X-ray diffraction
- Keyword (fr)
- Anisotropie Diffraction RX Effet contrainte Espace réciproque Etude théorique Facteur structure Goniomètre Monocristal Mémoire non volatile Méthode élément fini Orientation cristalline Oxyde de silicium Réseau réciproque Réseau(arrangement) Silicium Structure cristalline Transistor 6855J Si SiO2
- Keyword (en)
- Anisotropy XRD Stress effects Reciprocal space Theoretical study Structure factors Goniometers Monocrystals Non volatile memory Finite element method Crystal orientation Silicon oxides Reciprocal lattice Arrays Silicon Crystal structure Transistors
- Keyword (es)
- Espacio recíproco Memoria no volátil Red recíproca
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20787651
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2008.04.061 
https://dx.doi.org/10.1016/j.tsf.2008.04.061
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