Infrared light emission from porous silicon
- Author
- JIA, Guobin1 ; SEIFERT, Winfried1 2 ; ARGUIROV, Tzanimir1 2 ; KITTLER, Martin1 2
[1] IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
[2] IHP/BTU Joint Lab, Konrad-Wachsmann-Allee 1, 03046 Cottbus, Germany - Conference title
- International Conference on Defects - Recognition, Imagine and Physics in Semiconductors (DRIP-XII 2007)
- Conference name
- International Conference on Defects - Recognition, Imagine and Physics in Semiconductors (DRIP-XII 2007) (DRIP-XII 2007) (12 ; Berlin 2007-09-09)
- Author (monograph)
- ZEIMER, Ute (Editor)1 ; TOMM, Jens W (Editor)2
[1] Ferdinand-Braun-Institut für Höchsfrequenztechnik, Gustav-Kirchhoff-Strasse, Berlin 12489, Germany
[2] Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, Berlin 12489, Germany - Source
Journal of materials science. Materials in electronics. 2008, Vol 19 ; S9-S13 ; SUP1 ; ref : 11 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Electroluminescence Emission optique Etat interface Jonction p n Large bande Matériau poreux Oxyde d'indium Oxyde d'étain Oxyde de silicium Photoluminescence Rayonnement IR Recombinaison radiative Silicium Température ambiante 8105R Si SiOx
- Keyword (en)
- Electroluminescence Light emission Interface state p n junction Wide band Porous material Indium oxide Tin oxide Silicon oxides Photoluminescence Infrared radiation Radiative recombination Silicon Room temperature
- Keyword (es)
- Electroluminiscencia Emisión óptica Estado interfase Unión p n Banda ancha Material poroso Indio óxido Estaño óxido Fotoluminiscencia Radiación infrarroja Recombinación radiativa Silicio Temperatura ambiente
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05R Porous materials; granular materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20818266
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10854-007-9560-6 
https://dx.doi.org/10.1007/s10854-007-9560-6
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