Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy
- Author
- MONTGOMERY, Paul1 ; ANSTOTZ, Freddy1 ; JOHNSON, Gyasi1 ; KIEFER, Renaud2
[1] Institut d'Electronique du Solide et des Systèmes (InESS), Laboratoire Commun ULP/CNRS -UMR 7163, 23 rue du Loess, Strasbourg 67037, France
[2] Laboratoire des Systèmes Photoniques (LSP), INSA de Strasbourg, 24 blvd de la victoire, Strasbourg 67084, France - Conference title
- International Conference on Defects - Recognition, Imagine and Physics in Semiconductors (DRIP-XII 2007)
- Conference name
- International Conference on Defects - Recognition, Imagine and Physics in Semiconductors (DRIP-XII 2007) (DRIP-XII 2007) (12 ; Berlin 2007-09-09)
- Author (monograph)
- ZEIMER, Ute (Editor)1 ; TOMM, Jens W (Editor)2
[1] Ferdinand-Braun-Institut für Höchsfrequenztechnik, Gustav-Kirchhoff-Strasse, Berlin 12489, Germany
[2] Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, Berlin 12489, Germany - Source
Journal of materials science. Materials in electronics. 2008, Vol 19 ; S194-S198 ; SUP1 ; ref : 14 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Algorithme Analyse surface Caméra CCD Champ proche Chronométrie Evaluation performance Image tridimensionnelle Interférométrie Langage VHDL Lumière blanche Microscope balayage Miniaturisation Prototype Réseau porte programmable Structure surface Technologie MOS complémentaire Traitement image
- Keyword (en)
- Algorithm Surface analysis CCD camera Near field Time measurement Performance evaluation Tridimensional image Interferometry VHDL language White light Scanning microscope Miniaturization Prototype Field programmable gate array Surface structure Complementary MOS technology Image processing
- Keyword (es)
- Algoritmo Análisis superficie Cámara CCD Campo próximo Cronometría Evaluación prestación Imagen tridimensional Interferometría Lenguaje VHDL Luz blanca Microscopio barrido Miniaturización Prototipo Red puerta programable Estructura superficie Tecnología MOS complementario Procesamiento imagen
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F16 Imaging devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A6 Digital circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20818302
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1007/s10854-007-9491-2 
https://dx.doi.org/10.1007/s10854-007-9491-2
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-007-9491-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:109:\"Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:2:\"19\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:9:\"S194-S198\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"MONTGOMERY\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Paul\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:15:\"ANSTOTZ, Freddy\";i:1;s:14:\"JOHNSON, Gyasi\";i:2;s:14:\"KIEFER, Renaud\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:4:\"SUP1\";s:9:\"\u0000*\u0000btitle\";s:104:\"International Conference on Defects - Recognition, Imagine and Physics in Semiconductors (DRIP-XII 2007)\";s:8:\"\u0000*\u0000title\";s:109:\"Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-007-9491-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:109:\"Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:2:\"19\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:9:\"S194-S198\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"MONTGOMERY\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Paul\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:15:\"ANSTOTZ, Freddy\";i:1;s:14:\"JOHNSON, Gyasi\";i:2;s:14:\"KIEFER, Renaud\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:4:\"SUP1\";s:9:\"\u0000*\u0000btitle\";s:104:\"International Conference on Defects - Recognition, Imagine and Physics in Semiconductors (DRIP-XII 2007)\";s:8:\"\u0000*\u0000title\";s:109:\"Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-007-9491-2\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-007-9491-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:109:\"Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:2:\"19\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:9:\"S194-S198\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"MONTGOMERY\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Paul\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:15:\"ANSTOTZ, Freddy\";i:1;s:14:\"JOHNSON, Gyasi\";i:2;s:14:\"KIEFER, Renaud\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:4:\"SUP1\";s:9:\"\u0000*\u0000btitle\";s:104:\"International Conference on Defects - Recognition, Imagine and Physics in Semiconductors (DRIP-XII 2007)\";s:8:\"\u0000*\u0000title\";s:109:\"Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-007-9491-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:109:\"Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:2:\"19\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:9:\"S194-S198\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"MONTGOMERY\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Paul\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:15:\"ANSTOTZ, Freddy\";i:1;s:14:\"JOHNSON, Gyasi\";i:2;s:14:\"KIEFER, Renaud\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:4:\"SUP1\";s:9:\"\u0000*\u0000btitle\";s:104:\"International Conference on Defects - Recognition, Imagine and Physics in Semiconductors (DRIP-XII 2007)\";s:8:\"\u0000*\u0000title\";s:109:\"Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s10854-007-9491-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:109:\"Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of materials science. Materials in electronics\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. mater. sci., Mater. electron\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:2:\"19\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:9:\"S194-S198\";s:7:\"\u0000*\u0000issn\";s:9:\"0957-4522\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"MONTGOMERY\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Paul\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:15:\"ANSTOTZ, Freddy\";i:1;s:14:\"JOHNSON, Gyasi\";i:2;s:14:\"KIEFER, Renaud\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:4:\"SUP1\";s:9:\"\u0000*\u0000btitle\";s:104:\"International Conference on Defects - Recognition, Imagine and Physics in Semiconductors (DRIP-XII 2007)\";s:8:\"\u0000*\u0000title\";s:109:\"Real time surface morphology analysis of semiconductor materials and devices using 4D interference microscopy\";s:8:\"\u0000*\u0000place\";s:11:\"Norwell, MA\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
