Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors : Nanowire transistors: modeling, device, desing, and technology
- Author
- LIOW, Tsung-Yang1 2 ; TAN, Kian-Ming1 ; RINUS TEK PO LEE1 ; MING ZHU3 ; TAN, Ben Lian-Huat2 ; BALASUBRAMANIAN, N4 ; YEO, Yee-Chia1 5
[1] Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore
[2] Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 117685, Singapore
[3] Technology Development Department, Chartered Semiconductor Manufacturing, Singapore 738406, Singapore
[4] Silterra, Kulim 09000, Malaysia
[5] Agency for Science, Technology and Research (A*STAR), Singapore 117685, Singapore - Source
I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 11, pp 3048-3055, 8 p ; ref : 24 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Germanium stressors silicon-germanium stressors strained silicon nanowires
- Keyword (fr)
- Couche ultramince Nanofil Transistor effet champ
- Keyword (en)
- Ultrathin films Nanowires Field effect transistor
- Keyword (es)
- Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20859772
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2008.2005153 
https://dx.doi.org/10.1109/TED.2008.2005153
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