Modelling MOSFET gate length variability for future technology nodes
- Author
- PATSIS, G. P1 2 3
[1] Institute of Microelectronics, NCSR 'Demokritos', 15310 Athens, Greece
[2] Department of Electronics, TEI of Athens, 12210 Aegaleo, Greece
[3] Department of Electronics, TEI ofPeiraias, 12244 Aegaleo, Greece - Conference name
- International Conference on Micro-Nanoelectronics, Nanotechnology and MEMs (Micro) (Micro) (3 ; Athens 2007-11-18)
- Source
Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 11, pp 2541-2543, 3 p ; ref : 9 ref
- ISSN
- 1862-6300
- Scientific domain
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Caractéristique électrique Courant drain Désadaptation Langage VHDL Largeur raie Logiciel Loi normale Matrice formage Modélisation Rugosité Transistor MOSFET
- Keyword (en)
- Electrical characteristic Drain current Mismatching VHDL language Line width Software Gaussian distribution Die Modeling Roughness MOSFET
- Keyword (es)
- Característica eléctrica Corriente dren Desadaptación Lenguaje VHDL Anchura raya espectral Logicial Curva Gauss Matriz formadora Modelización Rugosidad
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20860216
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.200780174 
https://dx.doi.org/10.1002/pssa.200780174
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