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Polar and nonpolar GaN quantum dots

Author
DAUDIN, Bruno1
[1] CEA-CNRS group 'Nanophysique et Semiconducteurs', CEA Grenoble, INAC/SP2M, 17 rue des Martyrs, 38 054 Grenoble, France
Source

Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 47 ; 473201.1-473201.15 ; ref : 104 ref

CODEN
JCOMEL
ISSN
0953-8984
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Analyse structurale Epitaxie jet moléculaire Microscopie électronique transmission Microstructure Mécanisme croissance Nitrure de gallium Paramètre cristallin Photoluminescence Point quantique Profil raie Propriété optique Revêtement Spectre résolution temporelle GaN
Keyword (en)
Structural analysis Molecular beam epitaxy Transmission electron microscopy Microstructure Growth mechanism Gallium nitride Lattice parameters Photoluminescence Quantum dots Line shape Optical properties Coatings Time resolved spectra
Keyword (es)
Análisis estructural Mecanismo crecimiento Galio nitruro
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H67 Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures / 001B70H67H Quantum dots

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20862978

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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