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Polaronic states in Si nanocrystals embedded in SiO2 matrix

Author
MAHDOUANI, M1 ; BOURGUIGA, R1 2 ; JAZIRI, S1 2
[1] Laboratoire de Physique des Matériaux, Structures et Propriétés, Tunisia
[2] Faculté des Sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia
Source

Physica. E, low-dimentional systems and nanostructures. 2008, Vol 41, Num 2, pp 228-234, 7 p ; ref : 29 ref

ISSN
1386-9477
Scientific domain
Crystallography; Electronics; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
72.20.Jv 73.20.-r 73.22.-f 78.47.+p 78.67.Hc Electron-phonon interaction Polaronic states Self-assembled quantum dots
Keyword (fr)
Couche autoassemblée Couplage résonnant Densité état électron Effet dimensionnel Interaction Fröhlich Interaction électron phonon Nanocristal Niveau énergie Oxyde de silicium Point quantique Polaron Recombinaison Auger Recombinaison non radiative Silicium Sous bande Structure électronique Transition interbande Si SiO2
Keyword (en)
Self-assembled layers Resonant coupling Electronic density of states Size effect Froehlich interactions Electron-phonon interactions Nanocrystal Energy levels Silicon oxides Quantum dots Polarons Auger recombination Non radiative recombination Silicon Subband Electronic structure Interband transitions
Keyword (es)
Acoplamiento resonante Nanocristal Recombinación Auger Recombinación no radiativa Subbanda
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems / 001B70C21L Quantum dots

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20893686

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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