The Lithography Technology for the 32 nm HP and Beyond
- Author
- DUSA, Mircea1 ; ARNOLD, Bill2 ; FINDERS, Jo3 ; MEILING, Hans3 ; VAN INGEN SCHENAU, Koen3 ; CHEN, Alek C4
[1] ASML TDC USA, 4211 Burton Drive, Santa Clara, CA 95054, United States
[2] CASML TDC, 8555 S. River Parkway, Tempe, AZ 85048, United States
[3] ASML, De Run 6501, 5504 DR, Veldhoven, Netherlands
[4] ASML TDC Asia, 1 IF, No. 178, Sec. 2, Gongdaowu Rd, Hsinchu 30055, Taiwan, Province of China - Conference title
- Photomask and next-generation lithography mask technology XV (16-18 April 2008, Yokohama, Japan)
- Conference name
- Photomask and next-generation lithography mask technology (15 ; Yokohama 2008)
- Author (monograph)
- Horiuchi, Toshiyuki (Editor)
Photomask Japan, Japan (Organiser of meeting)
BACUS, Technical group (Organiser of meeting)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7028, pp 702810.1-702810.11 ; 2 ; ref : 17 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-7243-4 0-8194-7243-3
- Scientific domain
- Electronics; Metrology and instrumentation; Optics; Physics
- Publisher
- SPIE, Bellingham, Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Commande processus Couche barrière Couche sacrificielle Evaluation performance Fabrication microélectronique Lithographie Méthode immersion Pastille électronique Qualité image Rayonnement UV extrême Résolution image Scanneur
- Keyword (en)
- Process control Barrier layer Sacrificial layer Performance evaluation Microelectronic fabrication Lithography Immersion method Wafer Image quality Vacuum ultraviolet radiation Image resolution Scanner
- Keyword (es)
- Control proceso Capa sacrificial Evaluación prestación Fabricación microeléctrica Litografía Método immersión Pastilla electrónica Calidad imagen Radiación ultravioleta extrema Resolución imagen Escáner
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F16 Imaging devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20917658
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1117/12.796016 
https://dx.doi.org/10.1117/12.796016
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