Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs
- Author
- ZHEVNYAK, Oleg1 ; BORZDOV, Vladimir1 ; BORZDOV, Andrey1 ; POZDNYAKOV, Dmitry1 ; KOMAROV, Fadei1
[1] Belarus State University, Nezavisimosty av. 4, Minsk, 220030, Belgium - Conference title
- Micro- and nanoelectronics 2007 (1-5 October 2007, Zvenigorod, Russia)
- Conference name
- ICMNE-2007 (Zvenigorod 2007)
- Author (monograph)
- Valiev, Kamil Akhmetovich (Editor); Orlikovskii, Aleksandr Aleksandrovich (Editor)
Fiziko-tekhnologicheskii institut, Rossiiskaia akademiia nauk, Russian Federation (Organiser of meeting)
Society of Photo-optical Instrumentation Engineers, Russian Chapter, Russian Federation (Organiser of meeting)
Rossiiskii fond fundamentalnykh issledovanii, Russian Federation (Organiser of meeting)
Society of photo-optical instrumentation engineers, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7025, pp 70251L.1-70251L.8 ; ref : 36 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-7238-0 0-8194-7238-7
- Scientific domain
- Electronics; Metrology and instrumentation; Nanotechnologies, nanostructures, nanoobjects; Optics; Physics
- Publisher
- SPIE, Bellingham, Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- Russian
- Keyword (fr)
- Condition aux limites Couche appauvrissement Equation Poisson Méthode Monte Carlo Simulation numérique Technologie silicium sur isolant Transistor MOSFET Vitesse dérive
- Keyword (en)
- Boundary condition Depletion layer Poisson equation Monte Carlo method Numerical simulation Silicon on insulator technology MOSFET Drift velocity
- Keyword (es)
- Condiciones límites Capa empobrecimiento Ecuación Poisson Método Monte Carlo Simulación numérica Tecnología silicio sobre aislante Velocidad deriva
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20921951
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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