Electrical, structural, photoluminescence and optical properties of p-type conducting, antimony-doped SnO2 thin films
- Author
- NI, J1 ; ZHAO, X1 ; ZHENG, X1 ; ZHAO, J1 ; LIU, B1
[1] Key Laboratory of Silicate Materials Science and Engineering, Wuhan University of Technology, Ministry of Education, 122 Luoshi Road, Hongshan District, Wuhan, Hubei 430070, China - Source
Acta materialia. 2009, Vol 57, Num 1, pp 278-285, 8 p ; ref : 37 ref
- ISSN
- 1359-6454
- Scientific domain
- Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Annealing P-type SnO2 thin films Semiconductor devices Sputtering
- Keyword (fr)
- Couche mince Dopage Microstructure Propriété optique Propriété électrique Pulvérisation irradiation Recuit Semiconducteur Traitement thermique
- Keyword (en)
- Thin film Doping Microstructure Optical properties Electrical properties Sputtering Annealing Semiconductor materials Heat treatment
- Keyword (es)
- Capa fina Doping Microestructura Propiedad óptica Propiedad eléctrica Pulverización irradiación Recocido Semiconductor(material) Tratamiento térmico
- Keyword (de)
- Duennschicht Dopen Mikrogefuege Optische Eigenschaft Elektrische Eigenschaft Sputtern Gluehen Halbleiter Waermebehandlung
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy / 001D11A General
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy / 001D11C Production techniques / 001D11C06 Surface treatment
- Discipline
- Metals. Metallurgy Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20948410
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.actamat.2008.09.013 
https://dx.doi.org/10.1016/j.actamat.2008.09.013
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