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Molecular dynamics simulations of ion bombardment processes

Author
MARQUES, L. A1 ; JARAIZ, M1 ; RUBIO, J. E1 ; VICENTE, J1 ; BAILON, L. A1 ; BARBOLLA, J1
[1] Departamento de Electricidad y Electrónica, Facultad de Ciencias, Universidad de Valladolid, Spain
Conference title
International Conference on Materials for Microelectronics
Conference name
International Conference on Materials for Microelectronics (1 ; Barcelona 1994-10-17)
Author (monograph)
Institute of Materials, London SW1Y 5DB, United Kingdom (Funder/Sponsor)
Source

Materials science and technology. 1997, Vol 13, Num 11, pp 893-896 ; ref : 31 ref

CODEN
MSCTEP
ISSN
0267-0836
Scientific domain
Crystallography; Chemical industry parachemical industry; Mechanics acoustics; Metallurgy, welding; Condensed state physics
Publisher
Maney, Leeds
Publication country
United Kingdom
Document type
Conference Paper
Language
English
Keyword (fr)
Calcul dynamique moléculaire Cristal Distribution énergie Effet physique rayonnement Effet température Emission particule Etat amorphe Etude expérimentale Faisceau ion Fluence Matériau semiconducteur Pulvérisation irradiation Rendement Silicium Simulation ordinateur Si
Keyword (en)
Molecular dynamics calculations Crystals Energy distribution Physical radiation effects Temperature effects Particle emission Amorphous state Experimental study Ion beams Fluence Semiconductor materials Sputtering Yields Silicon Computerized simulation
Keyword (es)
Distribución energía Emisión partícula Fluencia
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I20 Impact phenomena (including electron spectra and sputtering) / 001B70I20R Atomic, molecular, and ion beam impact and interactions with surfaces

Pacs
7920R Atomic, molecular, and ion beam impact and interactions with surfaces

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2094881

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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