Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy
- Author
- LOBO, Neysha1 ; KADIR, Abdul1 ; LASKAR, Masihhur R1 ; SHAH, A. P1 ; GOKHALE, M. R1 ; RAHMAN, A. A1 ; ARORA, B. M1 ; NARASIMHAN, K. L1 ; BHATTACHARYA, Arnab1
[1] Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India - Conference title
- The 14th International conference on Metalorganic Vapor Phase Epitax ICMOVPE-XIV
- Conference name
- International conference on Metalorganic Vapor Phase Epitax ICMOVPE (14 ; Metz 2008-06-01)
- Author (monograph)
- SCHOLZ, F (Editor)1 ; IRVINE, S (Editor)1 ; MULLIN, B (Editor)1
[1] Institut for Optoelektronik, Universitat Ulm, Albert-Einstein-Allee 45, 89081 Ulm, Germany - Source
Journal of crystal growth. 2008, Vol 310, Num 23, pp 4747-4750, 4 p ; ref : 15 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 81.05.Ea;78.66.Fd 82.80.Kq A1. Defects A1. Impurities A3. Metalorganic vapor phase epitaxy B1. Gallium nitride
- Keyword (fr)
- Bande interdite Coefficient absorption Composé III-V Défaut surface Epaisseur couche Epitaxie phase vapeur Etat surface Mécanisme croissance Méthode MOVPE Nitrure de gallium Norme mesure Semiconducteur III-V 6855J 8110A 8115K AlGaN GaN
- Keyword (en)
- Energy gap Absorption coefficients III-V compound Surface defect Layer thickness VPE Surface states Growth mechanism MOVPE method Gallium nitride Measurement standards III-V semiconductors
- Keyword (es)
- Compuesto III-V Defecto superficie Espesor capa Mecanismo crecimiento Método MOVPE Galio nitruro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21021807
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2008.08.022 
https://dx.doi.org/10.1016/j.jcrysgro.2008.08.022
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