Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) silicon substrate by MOVPE
- Author
- KUNERT, B1 ; ZINNKANN, S2 ; VOLZ, K2 ; STOLZ, W2
[1] NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg, Germany
[2] Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg, Germany - Conference title
- The 14th International conference on Metalorganic Vapor Phase Epitax ICMOVPE-XIV
- Conference name
- International conference on Metalorganic Vapor Phase Epitax ICMOVPE (14 ; Metz 2008-06-01)
- Author (monograph)
- SCHOLZ, F (Editor)1 ; IRVINE, S (Editor)1 ; MULLIN, B (Editor)1
[1] Institut for Optoelektronik, Universitat Ulm, Albert-Einstein-Allee 45, 89081 Ulm, Germany - Source
Journal of crystal growth. 2008, Vol 310, Num 23, pp 4776-4779, 4 p ; ref : 10 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A3. Organometallic vapor-phase epitaxy B1. Dilute nitrides B2. Semiconducting III-V materials B3. Heterojunction semiconductor devices B3. Laser diodes
- Keyword (fr)
- Compensation Contrainte traction Couche contrainte Diffraction RX Diode laser Dispositif optoélectronique Epitaxie phase vapeur Gallium Hétérojonction semiconducteur Hétérostructure Laser semiconducteur Matière active Matériau laser Mécanisme croissance Méthode MOVPE Nitrure Perfection cristalline Photoluminescence Puits quantique multiple Semiconducteur III-V Silicium Température ambiante 4270H 7855 8110A 8115K Si Substrat silicium
- Keyword (en)
- Compensation Tensile stress Strained layer XRD Laser diodes Optoelectronic devices VPE Gallium Semiconductor heterojunctions Heterostructures Semiconductor lasers Active material Laser materials Growth mechanism MOVPE method Nitrides Crystal perfection Photoluminescence Multiple quantum well III-V semiconductors Silicon Ambient temperature
- Keyword (es)
- Tensión traccíon Capa forzada Materia activa Mecanismo crecimiento Método MOVPE Perfección cristalina Pozo cuántico múltiple
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B70 Optical materials / 001B40B70H Laser materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics : optics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21021814
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2008.07.097 
https://dx.doi.org/10.1016/j.jcrysgro.2008.07.097
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