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Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy

Author
MEISSNER, Christian1 2 ; PLOCH, Simon1 ; LEYER, Martin1 ; PRISTOVSEK, Markus1 ; KNEISSL, Michael1
[1] Institut für Festkörperphysik, Technische Universität Berlin, EW 6-1, Hardenbergstrasse 36, 10623 Berlin, Germany
[2] ISAS -Institute for Analytical Sciences, Albert-Einstein-Strasse 9, 12489 Berlin, Germany
Conference title
The 14th International conference on Metalorganic Vapor Phase Epitax ICMOVPE-XIV
Conference name
International conference on Metalorganic Vapor Phase Epitax ICMOVPE (14 ; Metz 2008-06-01)
Author (monograph)
SCHOLZ, F (Editor)1 ; IRVINE, S (Editor)1 ; MULLIN, B (Editor)1
[1] Institut for Optoelektronik, Universitat Ulm, Albert-Einstein-Allee 45, 89081 Ulm, Germany
Source

Journal of crystal growth. 2008, Vol 310, Num 23, pp 4959-4962, 4 p ; ref : 10 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
68.37.Ps 81.05.Ea 81.07.Ta 81.15.Kk A1. Nanostructures A3. Metalorganic vapour phase epitaxy B1. Nitrides B2. Semiconducting indium compounds
Keyword (fr)
Ammoniac Commande dimension Composé III-V Composé de l'indium Composé organométallique Diffraction RX Dépendance température Ellipsométrie spectroscopique Epitaxie Gravure Microscopie force atomique Mécanisme croissance Nanomatériau Nanostructure Nitrure d'indium Nitrure de gallium Point quantique Pression partielle Semiconducteur III-V Taux croissance 8105L 8107 8107T 8110A GaN InN NH3
Keyword (en)
Ammonia Size control III-V compound Indium compounds Organometallic compounds XRD Temperature dependence Spectroscopic ellipsometry Epitaxy Etching Atomic force microscopy Growth mechanism Nanostructured materials Nanostructures Indium nitride Gallium nitride Quantum dots Partial pressure III-V semiconductors Growth rate
Keyword (es)
Compuesto III-V Elipsometría espectroscópica Mecanismo crecimiento Indio nitruro Galio nitruro
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05Z Other materials

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21021857

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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