Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots
- Author
- HOSPODKOVA, A1 ; PANGRAC, J1 ; OSWALD, J1 ; HULICIUS, E1 ; KULDOVA, K1 ; VYSKOCIL, J1 2 ; MELICHAR, K1 ; SIMECEK, T1
[1] Institute of Physics AS CR, v. v. i., cukrovamická 10, 162 00, Prague, Czech Republic
[2] Department of Mechanics and Materials Science, CTU FEE, Technická 2, 166 27, Prague, Czech Republic - Conference title
- The 14th International conference on Metalorganic Vapor Phase Epitax ICMOVPE-XIV
- Conference name
- International conference on Metalorganic Vapor Phase Epitax ICMOVPE (14 ; Metz 2008-06-01)
- Author (monograph)
- SCHOLZ, F (Editor)1 ; IRVINE, S (Editor)1 ; MULLIN, B (Editor)1
[1] Institut for Optoelektronik, Universitat Ulm, Albert-Einstein-Allee 45, 89081 Ulm, Germany - Source
Journal of crystal growth. 2008, Vol 310, Num 23, pp 5081-5084, 4 p ; ref : 8 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 68.37.Ps 68.65.Hb 73.21.La 73.61.Ey 78.55.-m 78.55.Cr 78.67.Hc A1. Atomic force microscopy A1. Nanostructures A3. Low-pressure metalorganic vapor phase B2. Semiconducting III-V materials epitaxy
- Keyword (fr)
- Agent surface Alliage(action) Arséniure d'indium Arséniure de gallium Basse pression Composé III-V Composé organométallique Couche contrainte Dissolution Epitaxie phase vapeur Etat fondamental Microscopie force atomique Mécanisme croissance Méthode MOVPE Nanomatériau Nanostructure Phase vapeur Photoluminescence Point quantique Pression vapeur Semiconducteur III-V Taux croissance 8107 8107T 8110A 8115K GaAs InAs InGaAs
- Keyword (en)
- Surfactants Alloying Indium arsenides Gallium arsenides Low pressure III-V compound Organometallic compounds Strained layer Dissolution VPE Ground states Atomic force microscopy Growth mechanism MOVPE method Nanostructured materials Nanostructures Vapor phase Photoluminescence Quantum dots Vapor pressure III-V semiconductors Growth rate
- Keyword (es)
- Compuesto III-V Capa forzada Mecanismo crecimiento Método MOVPE
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07T Quantum dots
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21021886
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2008.07.011 
https://dx.doi.org/10.1016/j.jcrysgro.2008.07.011
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