Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters
- Author
- AKASAKI, I1 ; AMANO, H1
[1] Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan - Source
Japanese journal of applied physics. 1997, Vol 36, Num 9A, pp 5393-5408 ; 1 ; ref : 91 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Nitrure Composé III-V Composé binaire Composé ternaire Croissance cristalline Diode électroluminescente Fabrication Gallium Nitrure Indium Nitrure Laser injection Laser semiconducteur Puits quantique Al Ga N AlGaN Ga In N Ga N GaInN GaN
- Keyword (en)
- Aluminium Nitrides III-V compound Binary compound Ternary compound Crystal growth Light emitting diode Manufacturing Gallium Nitrides Indium Nitrides Injection laser Semiconductor laser Quantum well
- Keyword (es)
- Aluminio Nitruro Compuesto III-V Compuesto binario Compuesto ternario Crecimiento cristalino Diodo electroluminescente Fabricación Galio Nitruro Indio Nitruro Laser inyección Laser semiconductor Pozo cuántico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2105080
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.36.5393 
https://dx.doi.org/10.1143/JJAP.36.5393
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