Programmable Resistance Switching in Nanoscale Two-Terminal Devices
- Author
- SUNG HYUN JO1 ; KIM, Kuk-Hwan1 ; WEI LU1
[1] Department of Electrical Engineering and Computer Science, the University of Michigan, Ann Arbor, Michigan 48109, United States - Source
Nano letters (Print). 2009, Vol 9, Num 1, pp 496-500, 5 p ; ref : 30 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Commutation Echelle nanométrique Mémoire Nanostructure Photodétecteur 6865 8560G
- Keyword (en)
- Switching Nanometer scale Memory Nanostructures Photodetectors
- Keyword (es)
- Memoria
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21051899
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl803669s 
https://dx.doi.org/10.1021/nl803669s
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