Influence of buffer layers and barrier metals on properties of (Ba, Sr)TiO3 films prepared by liquid source chemical vapor deposition
- Author
- KAWAHARA, T1 ; YAMAMUKA, M1 ; TANIMURA, J1 ; TARUTANI, M1 ; KUROIWA, T1 ; HORIKAWA, T1 ; ONO, K1
[1] Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan - Conference title
- Ferroelectric materials and their applications
- Conference name
- FMA-14 Meeting on Ferroelectric Materials and Their Applications (14 ; Kyoto 1997-05-28)
- Author (monograph)
- ISHIBASHI, Yoshihiro (Editor); OKUYAMA, Masanori (Editor); SHIOSAKI, Tadashi (Editor); ICHINOSE, Noboru (Editor); NAKAMURA, Kiyoshi (Editor)
- Source
Japanese journal of applied physics. 1997, Vol 36, Num 9B, pp 5874-5878 ; 1 ; ref : 13 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Baryum Titanate Composé quaternaire Dépôt chimique phase vapeur Fabrication microélectronique Mémoire accès direct Mémoire dynamique Ruthénium Strontium Titanate (Ba,Sr)TiO3 Ba O Sr Ti
- Keyword (en)
- Barium Titanates Quaternary compound Chemical vapor deposition Microelectronic fabrication Random access memory(RAM) Dynamical storage Ruthenium Strontium Titanates
- Keyword (es)
- Bario Titanato Compuesto cuaternario Depósito químico fase vapor Fabricación microeléctrica Memoria acceso directo Memoria dinámica Rutenio Estroncio Titanato
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2112305
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.36.5874 
https://dx.doi.org/10.1143/JJAP.36.5874
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