High-resolution analytical electron microscopy of catalytically etched silicon nanowires
- Autor
- SCHADE, M1 ; GEYER, N1 ; FUHRMANN, B1 ; HEYROTH, F1 ; LEIPNER, H. S1
[1] Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle, Germany - Fuente
Applied physics. A, Materials science & processing (Print). 2009, Vol 95, Num 2, pp 325-327, 3 p ; ref : 8 ref
- ISSN
- 0947-8396
- Campo Científico
- Electronics; Optics; Condensed state physics
- Editor
- Springer, Heidelberg
- País de la publicación
- Germany
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave (fr)
- Alignement vertical Gravure plasma Lithographie Microscopie électronique analytique Microscopie électronique balayage transmission Microscopie électronique transmission Microstructure Nanofil Procédé voie humide Silicium Si
- Palabra clave (in)
- Vertical alignment Plasma etching Lithography Analytical electron microscopy Scanning transmission electron microscopy Transmission electron microscopy Microstructure Nanowires Wet process Silicon
- Palabra clave (es)
- Alineacíon vertical Grabado plasma Microscopía electrónica analítica Procedimiento vía húmeda
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A46 Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 21206066
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s00339-009-5101-x 
https://dx.doi.org/10.1007/s00339-009-5101-x
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