Through-Silicon Via (TSV) : This technology allows stacked silicon chips to interconnect through direct contact to provide high-speed signal processing and improved photo detection for image sensing
- Author
- MOTOYOSHI, Makoto1
[1] E207 Tokyo Institute of Technology Yokohama, Yokohama, Kanagawa 226-8510, Japan - Issue title
- 3-D Integration Technologies
- Author (monograph)
- CAMPARDO, G (Editor); RIPAMONTI, G (Editor); MICHELONI, R (Editor)
[1] Card Business Unit, Numonyx NAND Flash Group, International - Source
Proceedings of the IEEE. 2009, Vol 97, Num 1, pp 43-48, 6 p ; ref : 22 ref
- CODEN
- IEEPAD
- ISSN
- 0018-9219
- Scientific domain
- Computer science
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Chip size package (CSP) image sensor micro bump three-dimensional large-scale integration (3D-LSI) through-silicon via (TSV)
- Keyword (fr)
- Assemblage circuit intégré Circuit LSI Circuit intégré Densité élevée Détecteur image Haute performance Interconnexion Modèle 3 dimensions Packaging électronique Production masse Technologie CSP Traitement signal
- Keyword (en)
- Integrated circuit bonding LSI circuit Integrated circuit High density Image sensor High performance Interconnection Three dimensional model Electronic packaging Mass production Chip scale packaging Signal processing
- Keyword (es)
- Circuito LSI Circuito integrado Densidad elevada Detector imagen Alto rendimiento Interconexión Modelo 3 dimensiones Packaging electrónico Producción en masa Procesamiento señal
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F16 Imaging devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21244862
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Install on your browser
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:198:\"Through-Silicon Via (TSV) : This technology allows stacked silicon chips to interconnect through direct contact to provide high-speed signal processing and improved photo detection for image sensing\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Proceedings of the IEEE\";s:9:\"\u0000*\u0000stitle\";s:10:\"Proc. IEEE\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:2:\"97\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"43\";s:8:\"\u0000*\u0000epage\";s:2:\"48\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9219\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"MOTOYOSHI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Makoto\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEEPAD\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:28:\"3-D Integration Technologies\";s:8:\"\u0000*\u0000title\";s:198:\"Through-Silicon Via (TSV) : This technology allows stacked silicon chips to interconnect through direct contact to provide high-speed signal processing and improved photo detection for image sensing\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:198:\"Through-Silicon Via (TSV) : This technology allows stacked silicon chips to interconnect through direct contact to provide high-speed signal processing and improved photo detection for image sensing\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Proceedings of the IEEE\";s:9:\"\u0000*\u0000stitle\";s:10:\"Proc. IEEE\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:2:\"97\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"43\";s:8:\"\u0000*\u0000epage\";s:2:\"48\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9219\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"MOTOYOSHI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Makoto\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEEPAD\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:28:\"3-D Integration Technologies\";s:8:\"\u0000*\u0000title\";s:198:\"Through-Silicon Via (TSV) : This technology allows stacked silicon chips to interconnect through direct contact to provide high-speed signal processing and improved photo detection for image sensing\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:198:\"Through-Silicon Via (TSV) : This technology allows stacked silicon chips to interconnect through direct contact to provide high-speed signal processing and improved photo detection for image sensing\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Proceedings of the IEEE\";s:9:\"\u0000*\u0000stitle\";s:10:\"Proc. IEEE\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:2:\"97\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"43\";s:8:\"\u0000*\u0000epage\";s:2:\"48\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9219\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"MOTOYOSHI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Makoto\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEEPAD\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:28:\"3-D Integration Technologies\";s:8:\"\u0000*\u0000title\";s:198:\"Through-Silicon Via (TSV) : This technology allows stacked silicon chips to interconnect through direct contact to provide high-speed signal processing and improved photo detection for image sensing\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:198:\"Through-Silicon Via (TSV) : This technology allows stacked silicon chips to interconnect through direct contact to provide high-speed signal processing and improved photo detection for image sensing\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Proceedings of the IEEE\";s:9:\"\u0000*\u0000stitle\";s:10:\"Proc. IEEE\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:2:\"97\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"43\";s:8:\"\u0000*\u0000epage\";s:2:\"48\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9219\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"MOTOYOSHI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Makoto\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:0:{}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEEPAD\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:28:\"3-D Integration Technologies\";s:8:\"\u0000*\u0000title\";s:198:\"Through-Silicon Via (TSV) : This technology allows stacked silicon chips to interconnect through direct contact to provide high-speed signal processing and improved photo detection for image sensing\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
