The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
- Author
- SANCHEZ-GARCIA, M. A1 ; CALLEJA, E1 ; MONROY, E1 ; SANCHEZ, F. J1 ; CALLE, F1 ; MUNOZ, E1 ; BERESFORD, R1
[1] Departmento Ingenieria Electrónica, ETSI Telecomunicación, UPM Ciudad Universitaria s/n, 28040 Madrid, Spain - Source
Journal of crystal growth. 1998, Vol 183, Num 1-2, pp 23-30 ; ref : 22 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium nitrure Cinétique Composition chimique Composé binaire Couche épitaxique Croissance cristalline en phase vapeur Dépendance température Epitaxie jet moléculaire Etude expérimentale Gallium nitrure Hétéroépitaxie Morphologie Photoluminescence Propriété optique SEM Substrat Al N AlN Ga N GaN Substrat Si Composé minéral
- Keyword (en)
- Aluminium nitrides Kinetics Chemical composition Binary compounds Epitaxial layers Crystal growth from vapors Temperature dependence Molecular beam epitaxy Experimental study Gallium nitrides Heteroepitaxy Morphology Photoluminescence Optical properties SEM Substrates Inorganic compounds
- Keyword (es)
- Heteroepitaxia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2129601
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/S0022-0248(97)00386-2 
https://dx.doi.org/10.1016/S0022-0248(97)00386-2
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(97)00386-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:156:\"The effect of the III\/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:3:\"183\";s:8:\"\u0000*\u0000issue\";s:3:\"1-2\";s:8:\"\u0000*\u0000spage\";s:2:\"23\";s:8:\"\u0000*\u0000epage\";s:2:\"30\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:14:\"SANCHEZ-GARCIA\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:10:\"CALLEJA, E\";i:1;s:9:\"MONROY, E\";i:2;s:13:\"SANCHEZ, F. J\";i:3;s:8:\"CALLE, F\";i:4;s:8:\"MUNOZ, E\";i:5;s:12:\"BERESFORD, R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:156:\"The effect of the III\/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(97)00386-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:156:\"The effect of the III\/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:3:\"183\";s:8:\"\u0000*\u0000issue\";s:3:\"1-2\";s:8:\"\u0000*\u0000spage\";s:2:\"23\";s:8:\"\u0000*\u0000epage\";s:2:\"30\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:14:\"SANCHEZ-GARCIA\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:10:\"CALLEJA, E\";i:1;s:9:\"MONROY, E\";i:2;s:13:\"SANCHEZ, F. J\";i:3;s:8:\"CALLE, F\";i:4;s:8:\"MUNOZ, E\";i:5;s:12:\"BERESFORD, R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:156:\"The effect of the III\/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(97)00386-2\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(97)00386-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:156:\"The effect of the III\/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:3:\"183\";s:8:\"\u0000*\u0000issue\";s:3:\"1-2\";s:8:\"\u0000*\u0000spage\";s:2:\"23\";s:8:\"\u0000*\u0000epage\";s:2:\"30\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:14:\"SANCHEZ-GARCIA\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:10:\"CALLEJA, E\";i:1;s:9:\"MONROY, E\";i:2;s:13:\"SANCHEZ, F. J\";i:3;s:8:\"CALLE, F\";i:4;s:8:\"MUNOZ, E\";i:5;s:12:\"BERESFORD, R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:156:\"The effect of the III\/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0022-0248(97)00386-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:156:\"The effect of the III\/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Journal of crystal growth\";s:9:\"\u0000*\u0000stitle\";s:16:\"J. cryst. growth\";s:7:\"\u0000*\u0000date\";s:4:\"1998\";s:9:\"\u0000*\u0000volume\";s:3:\"183\";s:8:\"\u0000*\u0000issue\";s:3:\"1-2\";s:8:\"\u0000*\u0000spage\";s:2:\"23\";s:8:\"\u0000*\u0000epage\";s:2:\"30\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-0248\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:14:\"SANCHEZ-GARCIA\";s:10:\"\u0000*\u0000aufirst\";s:4:\"M. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:10:\"CALLEJA, E\";i:1;s:9:\"MONROY, E\";i:2;s:13:\"SANCHEZ, F. J\";i:3;s:8:\"CALLE, F\";i:4;s:8:\"MUNOZ, E\";i:5;s:12:\"BERESFORD, R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JCRGAE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:156:\"The effect of the III\/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
