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Polymer gate dielectrics with self-assembled monolayers for high-mobility organic thin-film transistors based on copper phthalocyanine

Author
YANMING SUN1 ; YUNQI LIU1 ; YING WANG1 ; CHONGAN DI1 ; WEIPING WU1 ; GUI YU1
[1] Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
Source

Applied physics. A, Materials science & processing (Print). 2009, Vol 95, Num 3, pp 777-780, 4 p ; ref : 26 ref

ISSN
0947-8396
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Springer, Heidelberg
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Capacité électrique Couche autoassemblée Couche mince Drain transistor Dépendance fréquence Morphologie surface Phtalocyanine métallique Piégeage porteur charge Transistor couche mince Vinylique alcool polymère
Keyword (en)
Capacitance Self-assembled layer Thin film Transistor drain Frequency dependence Surface morphology Metallophthalocyanine Charge carrier trapping Thin film transistor Polyvinylalcohol
Keyword (es)
Capacitancia Capa autoensamblada Capa fina Dren transistor Ftalocianina metálica Captura portador carga Transistor capa delgada Vinílico alcohol polímero
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21343970

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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