Stability of Three-Hydrogen Clusters on Graphene
- Autor
- ROMAN, Tanglaw1 ; NAKANISHI, Hiroshi1 ; KASAI, Hideaki1 ; NOBUHARA, Kunihiro2 ; SUGIMOTO, Tsuyoshi2 ; TANGE, Kyouichi2
[1] Division of Precision Science and Technology and Applied Physics, Osaka University, Suita, Osaka 565-0871, Japan
[2] Toyota Motor Corporation, Toyota, Aichi 471-8572, Japan - Fuente
Journal of the Physical Society of Japan. = Nihon Butsuri Gakkai ōji hōkoku. 2009, Vol 78, Num 3 ; 035002.1-035002.2 ; ref : 8 ref
- CODEN
- JUPSAU
- ISSN
- 0031-9015
- Campo Científico
- Crystallography; Mechanics acoustics; Condensed state physics; Theoretical physics
- Editor
- Physical Society of Japan, Tokyo
- País de la publicación
- Japan
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- adsorption properties defects deuterium graphite reactivity reconstruction storage
- Palabra clave (fr)
- Adsorption Agrégat atomique Défaut Graphène Hydrogène Stabilité phase Structure adsorption
- Palabra clave (in)
- Adsorption Atomic clusters Defects Graphene Hydrogen Phase stability Adsorption structure
- Palabra clave (es)
- Graphene Estructura adsorción
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A46 Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals
- Disciplina
- Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 21416917
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JPSJ.78.035002 
https://dx.doi.org/10.1143/JPSJ.78.035002
