Molecular beam epitaxy in a high-volume GaAs fab
- Author
- ROGERS, T. J1
[1] RF Micro Devices, Inc., 7628 Thomdike Road, Greensboro, NC 27409, United States - Conference title
- The 15th International Conference on Molecular Beam Epitaxy (MBE-XV)
- Conference name
- International Conference on Molecular Beam Epitaxy (15 ; Vancouver 2008-08-03)
- Author (monograph)
- WASILEWSKI, Z. R (Editor)1 ; BERESFORD, R (Editor)2
[1] National Research Council, Canada
[2] Brown University, United States - Source
Journal of crystal growth. 2009, Vol 311, Num 7, pp 1671-1675, 5 p ; ref : 4 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 81.05.Ea 81.15.Hi A3. Molecular beam epitaxy B2. Semiconducting III-V materials B2. Semiconducting gallium arsenide B3. Heterojunction bipolar transistors B3. High electron mobility transistors
- Keyword (fr)
- Arséniure de gallium Composé III-V Couche épitaxique Epitaxie jet moléculaire Equipement Mécanisme croissance Pastille électronique Semiconducteur III-V Transistor bipolaire hétérojonction Transistor mobilité électron élevée 8110A 8115H 8530T GaAs Substrat GaAs
- Keyword (en)
- Gallium arsenides III-V compound Epitaxial layers Molecular beam epitaxy Equipment Growth mechanism Wafers III-V semiconductors Heterojunction bipolar transistors High electron mobility transistors
- Keyword (es)
- Compuesto III-V Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21432487
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2008.11.087 
https://dx.doi.org/10.1016/j.jcrysgro.2008.11.087
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