Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate
- Author
- TIEN KHEE NG1 ; SOON FATT YOON1 2 ; KIAN HUA TAN1 ; KAH PIN CHEN1 2 ; TANOTO, Hendrix1 ; KIM LUONG LEW1 ; WICAKSONO, Satrio1 ; WAN KHAI LOKE1 ; DOHRMAN, Carl3 ; FITZGERALD, Eugene A3 4
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
[2] Singapore-MIT Alliance, N3.2-01-36, 65 Nanyang Drive, Singapore 637460, Singapore
[3] Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
[4] Singapore-MIT Alliance, Room 8-407, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States - Conference title
- The 15th International Conference on Molecular Beam Epitaxy (MBE-XV)
- Conference name
- International Conference on Molecular Beam Epitaxy (15 ; Vancouver 2008-08-03)
- Author (monograph)
- WASILEWSKI, Z. R (Editor)1 ; BERESFORD, R (Editor)2
[1] National Research Council, Canada
[2] Brown University, United States - Source
Journal of crystal growth. 2009, Vol 311, Num 7, pp 1754-1757, 4 p ; ref : 11 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- A1. Atomic force microscopy A1. Reflection high energy electron A3. Molecular beam epitaxy B1. Antimonides B1. Nitrides diffraction
- Keyword (fr)
- Alliage Ge Si Arséniure de gallium Composé III-V Coupe transversale Epitaxie jet moléculaire Etat surface Germanium Haute énergie Interface Microscopie force atomique Microscopie électronique transmission Morphologie surface Mécanisme croissance Nitrure Photoluminescence RHEED Recuit Rugosité Semiconducteur III-V Structure lamellaire 6114H 7855 8110A 8115H GaAs Ge Si SiGe Substrat germanium Substrat silicium
- Keyword (en)
- Ge-Si alloys Gallium arsenides III-V compound Cross section Molecular beam epitaxy Surface states Germanium High energy Interfaces Atomic force microscopy Transmission electron microscopy Surface morphology Growth mechanism Nitrides Photoluminescence RHEED Annealing Roughness III-V semiconductors Lamellar structure
- Keyword (es)
- Compuesto III-V Corte transverso Alta energía Mecanismo crecimiento Estructura lamelar
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A14 Electron diffraction and scattering / 001B60A14H Low-energy electron diffraction (leed) and reflection high-energy electron diffraction (rheed)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21432506
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2008.09.207 
https://dx.doi.org/10.1016/j.jcrysgro.2008.09.207
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