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Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate

Author
TIEN KHEE NG1 ; SOON FATT YOON1 2 ; KIAN HUA TAN1 ; KAH PIN CHEN1 2 ; TANOTO, Hendrix1 ; KIM LUONG LEW1 ; WICAKSONO, Satrio1 ; WAN KHAI LOKE1 ; DOHRMAN, Carl3 ; FITZGERALD, Eugene A3 4
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
[2] Singapore-MIT Alliance, N3.2-01-36, 65 Nanyang Drive, Singapore 637460, Singapore
[3] Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
[4] Singapore-MIT Alliance, Room 8-407, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
Conference title
The 15th International Conference on Molecular Beam Epitaxy (MBE-XV)
Conference name
International Conference on Molecular Beam Epitaxy (15 ; Vancouver 2008-08-03)
Author (monograph)
WASILEWSKI, Z. R (Editor)1 ; BERESFORD, R (Editor)2
[1] National Research Council, Canada
[2] Brown University, United States
Source

Journal of crystal growth. 2009, Vol 311, Num 7, pp 1754-1757, 4 p ; ref : 11 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
A1. Atomic force microscopy A1. Reflection high energy electron A3. Molecular beam epitaxy B1. Antimonides B1. Nitrides diffraction
Keyword (fr)
Alliage Ge Si Arséniure de gallium Composé III-V Coupe transversale Epitaxie jet moléculaire Etat surface Germanium Haute énergie Interface Microscopie force atomique Microscopie électronique transmission Morphologie surface Mécanisme croissance Nitrure Photoluminescence RHEED Recuit Rugosité Semiconducteur III-V Structure lamellaire 6114H 7855 8110A 8115H GaAs Ge Si SiGe Substrat germanium Substrat silicium
Keyword (en)
Ge-Si alloys Gallium arsenides III-V compound Cross section Molecular beam epitaxy Surface states Germanium High energy Interfaces Atomic force microscopy Transmission electron microscopy Surface morphology Growth mechanism Nitrides Photoluminescence RHEED Annealing Roughness III-V semiconductors Lamellar structure
Keyword (es)
Compuesto III-V Corte transverso Alta energía Mecanismo crecimiento Estructura lamelar
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A14 Electron diffraction and scattering / 001B60A14H Low-energy electron diffraction (leed) and reflection high-energy electron diffraction (rheed)

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21432506

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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