High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication

Author

CHOI, Donghun¹ ; HARRIS, James S¹ ; KIM, Eunji² ; MCLNTYRE, Paul C² ; CAGNON, Joel³ ; STEMMER, Susanne³
[1] Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305, United States
[2] Department of Material Science and Engineering, Stanford University, Stanford, CA 94305-4045, United States
[3] Materials Department, University of California, Santa Barbara, CA 93106-5050, United States

Conference title

The 15th International Conference on Molecular Beam Epitaxy (MBE-XV)

Conference name

International Conference on Molecular Beam Epitaxy (15 ; Vancouver 2008-08-03)

Author (monograph)

WASILEWSKI, Z. R (Editor)¹ ; BERESFORD, R (Editor)²
[1] National Research Council, Canada
[2] Brown University, United States

Source

Journal of crystal growth. 2009, Vol 311, Num 7, pp 1962-1971, 10 p ; ref : 32 ref

CODEN

JCRGAE

ISSN

0022-0248

Scientific domain

Crystallography; Geology; Metallurgy, welding

Publisher

Elsevier, Amsterdam

Publication country

Netherlands

Document type

Conference Paper

Language

English

Author keyword

68.55.-a 73.40.Qv 73.61.Ey A3. Molecular-beam epitaxy B2. Semiconducting III-V materials B3. High electron mobility transistors

Keyword (fr)

Arsenic Arséniure de gallium Caractéristique capacité tension Composé III-V Couche monomoléculaire Couche tampon Couche épaisse Couche épitaxique Courant drain Courant fuite Croissance cristalline en phase vapeur Diffraction RX Diffusion(transport) Dispositif semiconducteur Diélectrique permittivité élevée Dépôt chimique phase vapeur Electrode commande Epitaxie jet moléculaire Etat surface Faisceau moléculaire Germanium Haute pression Microscopie électronique transmission Morphologie surface Mécanisme croissance Méthode couche atomique Niveau Fermi Oxyde d'aluminium Photoluminescence Recuit Semiconducteur III-V Silicium Spectrométrie SIMS Structure MOS Structure électronique 6630 8110A 8115G 8115H GaAs Si Substrat germanium Substrat métal Substrat silicium

Keyword (en)

Arsenic Gallium arsenides CV characteristic III-V compound Monolayers Buffer layer Thick films Epitaxial layers Drain current Leakage currents Crystal growth from vapors XRD Diffusion Semiconductor devices High k dielectric CVD Gates Molecular beam epitaxy Surface states Molecular beams Germanium High pressure Transmission electron microscopy Surface morphology Growth mechanism Atomic layer method Fermi level Aluminium oxide Photoluminescence Annealing III-V semiconductors Silicon Secondary ion mass spectrometry MOS structure Electronic structure

Keyword (es)

Compuesto III-V Capa tampón Corriente dren Dieléctrico alta constante dieléctrica Mecanismo crecimiento Método capa atómica Aluminio óxido Espectrometría SIMS Estructura MOS

Classification

Pascal

001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Discipline

Physics and materials science Physics of condensed state : structure, mechanical and thermal properties

Origin

Inist-CNRS

Database

PASCAL

INIST identifier

21432559

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS