Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy
- Author
- SHAOQIANG CHEN1 ; SEO, Jongwon1 ; SAWAHATA, Junji1 ; AKIMOTO, Katsuhiro1
[1] Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba 305-8573, Japan - Conference title
- The 15th International Conference on Molecular Beam Epitaxy (MBE-XV)
- Conference name
- International Conference on Molecular Beam Epitaxy (15 ; Vancouver 2008-08-03)
- Author (monograph)
- WASILEWSKI, Z. R (Editor)1 ; BERESFORD, R (Editor)2
[1] National Research Council, Canada
[2] Brown University, United States - Source
Journal of crystal growth. 2009, Vol 311, Num 7, pp 2042-2045, 4 p ; ref : 12 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 33.55.Ad 39.10.+j 71.55.-i 71.55.Eq 74.25.Gz A1. Doping A2. Single-crystal growth A3. Molecular beam epitaxy B1. Nitrides B1. Rare-earth compounds B2. Semiconducting III-V materials
- Keyword (fr)
- Analyse diffraction RX Composé III-V Composé de lanthanide Croissance cristalline Dopage Epitaxie jet moléculaire Erbium Luminescence Monocristal Nitrure de gallium Propriété optique RBS Semiconducteur III-V 7820 8110 8115H GaN Substrat saphir
- Keyword (en)
- X-ray diffraction analysis III-V compound Rare earth compounds Crystal growth Doping Molecular beam epitaxy Erbium Luminescence Monocrystals Gallium nitride Optical properties RBS III-V semiconductors
- Keyword (es)
- Compuesto III-V Doping Galio nitruro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H20 Optical properties of bulk materials and thin films
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21432576
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2008.12.007 
https://dx.doi.org/10.1016/j.jcrysgro.2008.12.007
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