High-power high-efficiency 0.98-μm wavelength InGaAs-(In)GaAs(P)-InGaP broadened waveguide lasers grown by gas-source molecular beam epitaxy
- Author
- GOKHALE, M. R1 ; DRIES, J. C1 ; STUDENKOV, P. V1 ; FORREST, S. R1 ; GARBUZOV, D. Z2
[1] Center for Photonics and Optoelectronic Materials (POEM), Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States
[2] Sarnoff Corporation, Princeton, NJ 08543-5300, United States - Source
IEEE journal of quantum electronics. 1997, Vol 33, Num 12, pp 2266-2276 ; ref : 22 ref
- CODEN
- IEJQA7
- ISSN
- 0018-9197
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé binaire Composé quaternaire Composé ternaire Courant seuil Croissance cristalline Dépendance température Epitaxie jet moléculaire Etude expérimentale Fabrication Gallium arséniure Gallium phosphure Guide onde Indium arséniure Indium phosphure Laser pulsé Laser semiconducteur Perte optique Puissance sortie Puits quantique multiple Rayonnement IR As Ga In P As Ga Ga In P GaAs InGaAsP InGaP
- Keyword (en)
- Binary compounds Quaternary compounds Ternary compounds Threshold current Crystal growth Temperature dependence Molecular beam epitaxy Experimental study Fabrication Gallium arsenides Gallium phosphides Waveguides Indium arsenides Indium phosphides Pulsed lasers Semiconductor lasers Optical losses Output power Multiple quantum well Infrared radiation
- Keyword (es)
- Potencia salida Pozo cuántico múltiple
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2144467
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/3.644109 
https://dx.doi.org/10.1109/3.644109
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