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Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition

Author
KUO, Po-Yi1 ; CHAO, Tien-Sheng1 ; HUANG, Jyun-Siang1 ; LEI, Tan-Fu2
[1] Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Province of China
[2] Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan, Province of China
Source

IEEE electron device letters. 2009, Vol 30, Num 3, pp 234-236, 3 p ; ref : 16 ref

CODEN
EDLEDZ
ISSN
0741-3106
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
Charge retention Ge nanocrystals (Ge-NCs) endurance nonvolatile memory polycrystalline silicon thin-film transistors (poly-Si TFTs) programming/erasing
Keyword (fr)
Basse pression Circuit intégré Dépôt chimique phase vapeur Evaluation performance Fabrication microélectronique Facteur rétention Mémoire non volatile Nanocristal Piégeage porteur charge Polycristal Transistor couche mince
Keyword (en)
Low pressure Integrated circuit Chemical vapor deposition Performance evaluation Microelectronic fabrication Retention factor Non volatile memory Nanocrystal Charge carrier trapping Polycrystal Thin film transistor
Keyword (es)
Baja presión Circuito integrado Depósito químico fase vapor Evaluación prestación Fabricación microeléctrica Factor retención Memoria no volátil Nanocristal Captura portador carga Policristal Transistor capa delgada
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21474047

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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