Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition
- Author
- KUO, Po-Yi1 ; CHAO, Tien-Sheng1 ; HUANG, Jyun-Siang1 ; LEI, Tan-Fu2
[1] Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan, Province of China
[2] Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan, Province of China - Source
IEEE electron device letters. 2009, Vol 30, Num 3, pp 234-236, 3 p ; ref : 16 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Charge retention Ge nanocrystals (Ge-NCs) endurance nonvolatile memory polycrystalline silicon thin-film transistors (poly-Si TFTs) programming/erasing
- Keyword (fr)
- Basse pression Circuit intégré Dépôt chimique phase vapeur Evaluation performance Fabrication microélectronique Facteur rétention Mémoire non volatile Nanocristal Piégeage porteur charge Polycristal Transistor couche mince
- Keyword (en)
- Low pressure Integrated circuit Chemical vapor deposition Performance evaluation Microelectronic fabrication Retention factor Non volatile memory Nanocrystal Charge carrier trapping Polycrystal Thin film transistor
- Keyword (es)
- Baja presión Circuito integrado Depósito químico fase vapor Evaluación prestación Fabricación microeléctrica Factor retención Memoria no volátil Nanocristal Captura portador carga Policristal Transistor capa delgada
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21474047
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2008.2011145 
https://dx.doi.org/10.1109/LED.2008.2011145
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