Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s
- Author
- BLOKHIN, S. A1 4 ; LOTT, J. A2 ; MUTIG, A1 ; FIOL, G1 ; LEDENTSOV, N. N2 ; MAXIMOV, M. V3 ; NADTOCHIY, A. M1 4 ; SHCHUKIN, V. A2 ; BIMBERG, D1
[1] Institute of Solid-State Physics and Center of Nanophotonics, Technische Universitat Berlin, Hardenbergstrasse 36, Berlin 10623, Germany
[2] VI Systems GmbH, Hardenbergstrasse 7, Berlin 10623, Germany
[3] A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation
[4] A.F.Ioffe Physico-Technical Institute, Germany - Source
Electronics letters. 2009, Vol 45, Num 10, pp 501-503, 3 p ; ref : 6 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Engineering and Technology, Stevenage
- Publication country
- United Kingdom
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Laser cavité verticale 4255P
- Keyword (en)
- Vertical cavity laser
- Keyword (es)
- Laser cavidad vertical
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21480041
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el.2009.0552 
https://dx.doi.org/10.1049/el.2009.0552
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