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N-Doping of Graphene Through Electrothermal Reactions with Ammonia

Author
XINRAN WANG1 ; XIAOLIN LI1 ; LI ZHANG1 ; YOON, Youngki2 ; WEBER, Peter K3 ; HAILIANG WANG1 ; JING GUO2 ; HONGJIE DAI1
[1] Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, United States
[2] Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, United States
[3] Chemical Sciences Division, Lawrence Livermore National Laboratory (LLNL), Livermore, CA 94550, United States
Source

Science (Washington, D.C.). 2009, Vol 324, Num 5928, pp 768-771, 4 p

CODEN
SCIEAS
ISSN
0036-8075
Scientific domain
Multidisciplinary
Publisher
American Association for the Advancement of Science, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Ammoniac Atmosphère contrôlée Dopage Effet Joule Graphène Semiconducteur type n Transistor effet champ
Keyword (en)
Ammonia Controlled atmosphere Doping Joule effect Graphene n type semiconductor Field effect transistor
Keyword (es)
Amoníaco Atmósfera controlada Doping Efecto Joule Graphene Semiconductor tipo n Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21487901

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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