Numerical simulation of the effect of recombination centres and traps created by electron irradiation on the performance degradation of GaAs solar cells
- Author
- MEFTAH, A. F1 ; SENGOUGA, N1 ; BELGHACHI, A2 ; MEFTAH, A. M1
[1] Laboratory of Metallic and Semiconducting Materials, Faculty of Science and Engineering, Mohamed Kheider University, BP 145, 07000 Biskra, Algeria
[2] Laboratory of Semiconductor Devices Physics, Physics Department, University of Béchar, PO Box 417, Béchar 08000, Algeria - Source
Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 21 ; 215802.1-215802.7 ; ref : 19 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Arséniure de gallium Cellule solaire Courant court circuit Dégradation Effet rayonnement Etat défaut Faisceau électronique Niveau profond Piégeage porteur charge Recombinaison porteur charge Semiconducteur Simulation numérique GaAs
- Keyword (en)
- Gallium arsenides Solar cell Short circuit currents Degradation Radiation effect Defect states Electron beam Deep level Charge carrier trapping Charge carrier recombination Semiconductor materials Numerical simulation
- Keyword (es)
- Célula solar Degradación Efecto radiación Haz electrónico Nivel profundo Captura portador carga Recombinación portador carga Semiconductor(material) Simulación numérica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Discipline
- Energy
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21516965
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-8984/21/21/215802 
https://dx.doi.org/10.1088/0953-8984/21/21/215802
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