AIN films sputtered on iridium electrodes for bulk acoustic wave resonators
- Author
- CLEMENT, M1 ; OLIVARES, J1 ; IBORRA, E1 ; GONZALEZ-CASTILLA, S1 ; RIMMER, N2 ; RASTOGI, A2
[1] Grupo de Microsistemas y Materiales Electrónicos, Universidad Politécnica de Madrid, Madrid, Spain
[2] Aviza Technology Inc, Newport, South Wales, United Kingdom - Source
Thin solid films. 2009, Vol 517, Num 16, pp 4673-4678, 6 p ; ref : 26 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Acoustic wave devices Aluminum nitride High frequency resonator Iridium Piezoelectric effect Sputtering Surface morphology X-ray diffraction
- Keyword (fr)
- Adhérence Aluminium Attaque chimique Composé III-V Couche mince Cristal lamellaire Diagramme rotation Diffraction RX Dépôt pulvérisation Facteur qualité Germe cristallin Iridium Matériau piézoélectrique Microscopie force atomique Molybdène Morphologie surface Mécanisme croissance Nitrure d'aluminium Onde acoustique Perfection cristalline Propriété mécanique Pulvérisation irradiation Résonateur Semiconducteur III-V Silicium Structure cristalline Structure lamellaire Titane Tribologie 6855A 6860B 8105E 8115C AlN Ir Mo Si
- Keyword (en)
- Adhesion Aluminium Chemical etching III-V compound Thin films Layered crystals Rocking curve XRD Sputter deposition Quality factor Crystal seeds Iridium Piezoelectric materials Atomic force microscopy Molybdenum Surface morphology Growth mechanism Aluminium nitride Acoustic waves Crystal perfection Mechanical properties Sputtering Resonators III-V semiconductors Silicon Crystal structure Lamellar structure Titanium Tribology
- Keyword (es)
- Ataque químico Compuesto III-V Diagrama rotación Mecanismo crecimiento Aluminio nitruro Perfección cristalina Estructura lamelar
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic / 001B60H60B Mechanical and acoustical properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21532476
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2009.02.139 
https://dx.doi.org/10.1016/j.tsf.2009.02.139
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