Effect of fabrication atmosphere on dielectric properties of SiC/SiC composites
- Author
- YU, Xin-Min1 ; ZHOU, Wan-Cheng1 ; FA LUO1 ; ZHENG, Wen-Jing1 ; ZHU, Dong-Mei1
[1] State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Shaanxi, Xi'an 710072, China - Source
Journal of alloys and compounds. 2009, Vol 479, Num 1-2 ; L1-L3 ; ref : 25 ref
- ISSN
- 0925-8388
- Scientific domain
- Inorganic chemistry; Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- Ceramics Crystal structure Dielectric response Vapor deposition X-ray diffraction
- Keyword (fr)
- Atmosphère contrôlée Carbure de silicium Constante diélectrique Diffraction RX Dépôt chimique phase vapeur Facteur dissipation Matériau composite Matériau renforcé fibre Propriété diélectrique Relation fabrication propriété Stoechiométrie
- Keyword (en)
- Controlled atmospheres Silicon carbide Permittivity XRD CVD Dissipation factor Composite materials Fiber reinforced material Dielectric properties Fabrication property relation Stoichiometry
- Keyword (es)
- Silicio carburo Material reforzado fibra Relación fabricación propiedad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70G Dielectrics, piezoelectrics, and ferroelectrics and their properties / 001B70G22 Dielectric properties of solids and liquids / 001B70G22C Permittivity (dielectric function)
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21533272
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jallcom.2008.12.049 
https://dx.doi.org/10.1016/j.jallcom.2008.12.049
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