Recent advances in GaN transistors for future emerging applications
- Author
- YANAGIHARA, Manabu1 ; UEMOTO, Yasuhiro1 ; UEDA, Tetsuzo1 ; TANAKA, Tsuyoshi1 ; UEDA, Daisuke2
[1] Semiconductor Device Research Center, Semiconductor Company, Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo-shi, Kyoto 617-8520, Japan
[2] Advanced Technology Research Laboratories, Panasonic Corporation, 3-4 Hikaridai, Seika-cho, Souraku-gun, Kyoto 619-0237, Japan - Conference name
- International Workshop on Nitride Semiconductors (IWN 2008) (IWN 2008) (Montreux 2008-10-06)
- Source
Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 6, pp 1221-1227, 7 p ; ref : 11 ref
- ISSN
- 1862-6300
- Scientific domain
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Amplificateur puissance Circuit faible bruit Commutation Composé binaire Composé ternaire Conductivité thermique Courant drain Courant intense Dissipateur thermique Diélectrique Electronique puissance Epitaxie Figure bruit Gestion température packaging électronique Hyperfréquence In situ Nitrure d'aluminium Nitrure de gallium Nitrure de silicium Onde millimétrique Passivation Rigidité diélectrique Résistance thermique Silicium Système refroidissement Tension disruptive Transistor effet champ hétérojonction Transistor puissance AlGaN AlN GaN
- Keyword (en)
- Power amplifier Low noise circuit Switching Binary compound Ternary compound Thermal conductivity Drain current High strength current Heat sink Dielectric materials Power electronics Epitaxy Noise figure Thermal management (packaging) Microwave In situ Aluminium nitride Gallium nitride Silicon nitride Millimetric wave Passivation Dielectric strength Thermal resistance Silicon Cooling system Disruptive voltage Heterojunction field effect transistor Power transistor
- Keyword (es)
- Amplificador potencia Circuito débil ruido Conmutación Compuesto binario Compuesto ternario Conductividad térmica Corriente dren Corriente intensa Disipador térmico Dieléctrico Electrónica potencia Epitaxia Figura ruido Hiperfrecuencia In situ Aluminio nitruro Galio nitruro Silicio nitruro Onda milimétrica Pasivación Resistencia dieléctrica Resistencia térmica Silicio Sistema enfriamiento Voltaje disruptivo Transistor efecto campo heterounión Transistor potencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F05 Other multijunction devices. Power transistors. Thyristors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A2 Amplifiers
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21631541
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1002/pssa.200880968 
https://dx.doi.org/10.1002/pssa.200880968
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200880968\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:67:\"Recent advances in GaN transistors for future emerging applications\";s:9:\"\u0000*\u0000jtitle\";s:68:\"Physica status solidi. A, Applications and materials science (Print)\";s:9:\"\u0000*\u0000stitle\";s:48:\"Phys. status solidi, A Appl. mater. sci. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:3:\"206\";s:8:\"\u0000*\u0000issue\";s:1:\"6\";s:8:\"\u0000*\u0000spage\";s:4:\"1221\";s:8:\"\u0000*\u0000epage\";s:4:\"1227\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1862-6300\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"YANAGIHARA\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Manabu\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:16:\"UEMOTO, Yasuhiro\";i:1;s:13:\"UEDA, Tetsuzo\";i:2;s:16:\"TANAKA, Tsuyoshi\";i:3;s:13:\"UEDA, Daisuke\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:67:\"Recent advances in GaN transistors for future emerging applications\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200880968\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:67:\"Recent advances in GaN transistors for future emerging applications\";s:9:\"\u0000*\u0000jtitle\";s:68:\"Physica status solidi. A, Applications and materials science (Print)\";s:9:\"\u0000*\u0000stitle\";s:48:\"Phys. status solidi, A Appl. mater. sci. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:3:\"206\";s:8:\"\u0000*\u0000issue\";s:1:\"6\";s:8:\"\u0000*\u0000spage\";s:4:\"1221\";s:8:\"\u0000*\u0000epage\";s:4:\"1227\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1862-6300\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"YANAGIHARA\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Manabu\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:16:\"UEMOTO, Yasuhiro\";i:1;s:13:\"UEDA, Tetsuzo\";i:2;s:16:\"TANAKA, Tsuyoshi\";i:3;s:13:\"UEDA, Daisuke\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:67:\"Recent advances in GaN transistors for future emerging applications\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200880968\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200880968\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:67:\"Recent advances in GaN transistors for future emerging applications\";s:9:\"\u0000*\u0000jtitle\";s:68:\"Physica status solidi. A, Applications and materials science (Print)\";s:9:\"\u0000*\u0000stitle\";s:48:\"Phys. status solidi, A Appl. mater. sci. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:3:\"206\";s:8:\"\u0000*\u0000issue\";s:1:\"6\";s:8:\"\u0000*\u0000spage\";s:4:\"1221\";s:8:\"\u0000*\u0000epage\";s:4:\"1227\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1862-6300\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"YANAGIHARA\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Manabu\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:16:\"UEMOTO, Yasuhiro\";i:1;s:13:\"UEDA, Tetsuzo\";i:2;s:16:\"TANAKA, Tsuyoshi\";i:3;s:13:\"UEDA, Daisuke\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:67:\"Recent advances in GaN transistors for future emerging applications\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200880968\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:67:\"Recent advances in GaN transistors for future emerging applications\";s:9:\"\u0000*\u0000jtitle\";s:68:\"Physica status solidi. A, Applications and materials science (Print)\";s:9:\"\u0000*\u0000stitle\";s:48:\"Phys. status solidi, A Appl. mater. sci. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:3:\"206\";s:8:\"\u0000*\u0000issue\";s:1:\"6\";s:8:\"\u0000*\u0000spage\";s:4:\"1221\";s:8:\"\u0000*\u0000epage\";s:4:\"1227\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1862-6300\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"YANAGIHARA\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Manabu\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:16:\"UEMOTO, Yasuhiro\";i:1;s:13:\"UEDA, Tetsuzo\";i:2;s:16:\"TANAKA, Tsuyoshi\";i:3;s:13:\"UEDA, Daisuke\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:67:\"Recent advances in GaN transistors for future emerging applications\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:22:\"10.1002\/pssa.200880968\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:67:\"Recent advances in GaN transistors for future emerging applications\";s:9:\"\u0000*\u0000jtitle\";s:68:\"Physica status solidi. A, Applications and materials science (Print)\";s:9:\"\u0000*\u0000stitle\";s:48:\"Phys. status solidi, A Appl. mater. sci. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2009\";s:9:\"\u0000*\u0000volume\";s:3:\"206\";s:8:\"\u0000*\u0000issue\";s:1:\"6\";s:8:\"\u0000*\u0000spage\";s:4:\"1221\";s:8:\"\u0000*\u0000epage\";s:4:\"1227\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1862-6300\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"YANAGIHARA\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Manabu\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:16:\"UEMOTO, Yasuhiro\";i:1;s:13:\"UEDA, Tetsuzo\";i:2;s:16:\"TANAKA, Tsuyoshi\";i:3;s:13:\"UEDA, Daisuke\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:67:\"Recent advances in GaN transistors for future emerging applications\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"7\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
