Impurity binding energy of excited states in spherical quantum dot
- Author
- SADEGHI, E1
[1] Department of Physics, Yasouj University, Yasouj 75914-353, Iran, Islamic Republic of - Source
Physica. E, low-dimentional systems and nanostructures. 2009, Vol 41, Num 7, pp 1319-1322, 4 p ; ref : 20 ref
- ISSN
- 1386-9477
- Scientific domain
- Crystallography; Electronics; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 71.55.-i 71.55.Eq 73.20.Dx 73.20.Hb Impurity energy Normalized binding energy Turning point
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Arséniure de gallium Barrière potentiel Champ extérieur Effet champ électrique Energie liaison Etat excité Etat impureté Impureté Modèle masse effective Méthode variationnelle Niveau énergie Point quantique Semiconducteur III-V
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Gallium arsenides Potential barrier External fields Electric field effects Binding energy Excited states Impurity states Impurities Effective mass model Variational methods Energy levels Quantum dots III-V semiconductors
- Keyword (es)
- Mixto Modelo masa efectiva
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems / 001B70C21L Quantum dots
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21653691
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physe.2009.03.004 
https://dx.doi.org/10.1016/j.physe.2009.03.004
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