Amorphous silicon thin film solar cells deposited entirely by hot-wire chemical vapour deposition at low temperature (< 150 °C)
- Author
- VILLAR, Fernando1 ; ANTONY, Aldrin1 ; ESCARRE, Jordi1 ; IBARZ, Daniel1 ; ROLDAN, Rubén1 ; STELLA, Marco1 ; MUNOZ, Delfina1 ; MIGUEL ASENSI, José1 ; BERTOMEU, Joan1
[1] Departament de Física Aplicada i Òptica, Universitat de Barcelona, Marti i Franquès 1-11, 08028-Barcelona, Spain - Conference title
- Proceedings of the Fifth International Conference on Hot-Wire CVD (Cat-CVD) Process
- Conference name
- International Conference on Hot-Wire CVD (Cat-CVD) Process (Cat-CVD) Process (5 ; Cambridge, MA 2008-08-20)
- Author (monograph)
- GLEASON, Karen K (Editor)1 ; MATSUMURA, Hideki (Editor)2 ; NONOMURA, Shuichi (Editor)3 ; SCHRÖDER, Bernd (Editor)4 ; SCHROPP, Ruud E. I (Editor)5
[1] MIT, United States
[2] JAIST, Japan
[3] Gifu Univ., Japan
[4] Univ. Kaiserslautern, Germany
[5] Utrecht Univ., Netherlands - Source
Thin solid films. 2009, Vol 517, Num 12, pp 3575-3577, 3 p ; ref : 10 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Amorphous materials Hot-wire deposition Solar cells
- Keyword (fr)
- Argent Cellule solaire Conductivité électrique Couche mince amorphe Dispositif couche mince Dopage Dépôt chimique phase vapeur filament chaud Dépôt chimique phase vapeur Dépôt physique phase vapeur Dépôt pulvérisation Matériau amorphe hydrogéné Matériau amorphe Oxyde de zinc Pulvérisation cathodique Pulvérisation haute fréquence Silicium Verre 7361 8115C 8115G 8460J Si ZnO a-Si:H μc-Si:H
- Keyword (en)
- Silver Solar cells Electrical conductivity Amorphous thin film Thin film devices Doping Hot filament chemical vapor deposition CVD Physical vapor deposition Sputter deposition Amorphous hydrogenated material Amorphous material Zinc oxide Cathode sputtering Radiofrequency sputtering Silicon Glass
- Keyword (es)
- Capa fina amorfa Doping Depósito químico fase vapor filamento caliente Material amorfo Zinc óxido Pulverización alta frecuencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells
- Discipline
- Energy Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 21709239
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2009.01.074 
https://dx.doi.org/10.1016/j.tsf.2009.01.074
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