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Realization of high mobility p-type co-doped ZnO: AIN film with a high density of nitrogen-radicals

Author
JONG HYUN LEE1 ; JUN SEOK LEE1 ; SEUNG NAM CHA2 ; JONG MIN KIM2 ; DO SEOK SEO3 ; WON BIN IM3 ; JIN PYO HONG1
[1] Novel Functional Materials and Device Lab, Department of Physics, Hanyang University, Seoul 133-791, Korea, Republic of
[2] Samsung Advanced Institute of Technology, P.O. Box 111 Suwon 440-600, Korea, Republic of
[3] WONIL Image Maker, INC., No 212 2089 Jeongwang-Dong, Siheung, 429-450, Korea, Republic of
Conference title
The Proceedings of the 1st International Conference on Microelectronics and Plasma Technology (ICMAP 2008)
Conference name
ICMAP 2008 International Conference on Microelectronics and Plasma Technology (1 ; Jeju 2008-08-18)
Author (monograph)
YEOM, Geun-Young (Editor)1 ; HEEYEOP CHAE1 ; KONAGAI, M8 ; NAE-EUNG LEE1 ; STAMATE, E9 ; JUNSIN YI1 ; WON JONG YOO1 ; KYUNG CHEOL CHOI2 ; WONHO CHOE2 ; TAE HUN CHUNG3 ; JIN PYO HONG4 ; BYEONG-KWON JU5 ; KUTNEY, M. C6 ; DONGHWAN KIM5 ; HYOUN WOO KIM7
Korean Vacuum Society, Seoul, Korea, Republic of (Organiser of meeting)
[1] Sungkyunkwan University, Korea, Republic of
[2] KAIST, Korea, Republic of
[3] Dong-A University, Korea, Republic of
[4] Hanyang University, Korea, Republic of
[5] Korea University, Korea, Republic of
[6] Applieds Materials, United States
[7] Inha University, Korea, Republic of
[8] Tokyo Institute of Technology, Japan
[9] Risø National Laboratory, Denmark
Source

Thin solid films. 2009, Vol 517, Num 14, pp 3950-3953, 4 p ; ref : 12 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Aluminium-nitride codoped Homojunction ZnO p-type
Keyword (fr)
Addition phosphore Composé III-V Couche mince Densité élevée Homojonction Jonction p n Nitrure d'aluminium Oxyde de silicium Oxyde de zinc Propriété électrique Pulvérisation irradiation Quartz Semiconducteur III-V Source plasma 7350 8105E 8115C AlN ZnO
Keyword (en)
Phosphorus additions III-V compound Thin films High density Homojunctions p n junctions Aluminium nitride Silicon oxides Zinc oxide Electrical properties Sputtering Quartz III-V semiconductors Plasma sources
Keyword (es)
Compuesto III-V Densidad elevada Aluminio nitruro Zinc óxido
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C50 Electronic transport phenomena in thin films and low-dimensional structures

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
21713699

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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